8N65 Datasheet PDF - Unisonic Technologies


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8N65
Unisonic Technologies

Part Number 8N65
Description N-CHANNEL POWER MOSFET
Page 9 Pages

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UNISONIC TECHNOLOGIES CO., LTD
8N65
8A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N65 is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 1.4@VGS = 10 V
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N65L-TA3-T
8N65G-TA3-T
8N65L-TF3-T
8N65G-TF3-T
8N65L-TF1-T
8N65G-TF1-T
8N65L-TF3T-T
8N65G-TF3T-T
8N65L-T2Q-T
8N65G-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F3
TO-262
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
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8N65
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F3
TO-262
MARKING
Power MOSFET
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8N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 650 V
VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
8A
8A
32 A
230 mJ
14.7 mJ
4.5 V/ns
TO-220/TO-262
147 W
Power Dissipation
TO-220F/TO-220F1
TO-220F3
PD
48 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=7.1mH, IAS=8A, VDD= 50V, RG=25, Starting TJ=25°C
4. ISD 8A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-262
Junction to Case
TO-220F/TO-220F1
TO-220F3
SYMBOL
θJA
θJC
RATING
62.5
0.85
2.6
UNIT
°C/W
°C/W
°C/W
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8N65
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
650
V
Drain-Source Leakage Current
IDSS VDS = 650 V, VGS = 0 V
10 µA
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID =250μA,Referenced to 25°C
100 nA
-100 nA
0.7 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 4A
2.0 4.0 V
1.2 1.4
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0V,
f = 1MHz
1145 1255 pF
118 135 pF
19 25 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 325V, ID =8A,
RG = 25
(Note 1, 2)
VDS= 520V,ID=8A,
VGS= 10 V (Note 1, 2)
84 100
100 130
275 320
64.5 140
115 130
12
40
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS =8A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.4 V
8A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR VGS = 0 V, IS =8A,
QRR dIF/dt = 100 A/µs (Note 2)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
32 A
365 ns
3.4 µC
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