8205A Datasheet PDF - HSMC

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8205A
HSMC

Part Number 8205A
Description Dual N-Channel Enhancement-Mode MOSFET
Page 4 Pages


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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200701
Issued Date : 2007.03.01
Revised Date : 2007.03.12
Page No. : 1/4
8205A
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
RDS(on)=38m@VGS=2.5V, ID=5.2A; RDS(on)=25m@VGS=4.5V, ID=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion Battery Pack Applications
8-Lead Plastic TSSOP-8L
8205A Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Applications
Battery Protection
Load Switch
Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
PD Total Power Dissipation @TA=75oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6
30
1.5
0.96
-55 to +150
83
Units
V
V
A
A
W
W
°C
°C/W
8205A
HSMC Product Specification



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HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Static
BVDSS
Characteristic
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
gFS Forward Transconductance
Dynamic
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-off Delay Time
tf Turn-off Fall Time
Drain-Source Diode Characteristics
IS Maximum Diode Forward Current
VSD Drain-Source Diode Forward Voltage
Test Conditions
VGS=0V, ID=250uA
VGS=2.5V, ID=5.2A
VGS=4.5V, ID=6A
VDS=VGS, ID=250uA
VDS=20V, VGS=0V
VGS=±12V, VDS=0V
VDS=10V, ID=6A
VDS=10V, ID=6A, VGS=4.5V
VDS=8V, VGS=0V, f=1MHz
VDD=10V, ID=1A, VGS=4.5V
RGEN=6
VGS=0V, IS=1.7A
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Spec. No. : MOS200701
Issued Date : 2007.03.01
Revised Date : 2007.03.12
Page No. : 2/4
Min. Typ. Max. Unit
20 - - V
- 33 38
m
- 20 25
0.6 - 1.5 V
- - 1 uA
- - ±100 nA
7 13 -
S
- 4.86 -
- 0.92 -
- 1.4 -
- 562 -
- 106 -
- 75 -
- 8.1 -
- 9.95 -
- 21.85 -
- 5.35 -
nC
pF
ns
- - 1.7 A
- - 1.2 V
VGEN
Switching
Test Circuit
VDD
RD
VIN D
VOUT
RG
G
S
td(on)
ton Switching
Waveforms
tr
90%
td(off)
toff
tf
90%
Output, VOUT
10%
Input, VIN
10%
50%
10%
Inverted
90%
50%
Pulse Width
8205A
HSMC Product Specification



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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200701
Issued Date : 2007.03.01
Revised Date : 2007.03.12
Page No. : 3/4
TSSOP-8L Dimension
D
87 65
E1 E
Pin1
index
2 34
A1
b
R 0.15
Seating
A
e
Plane
S
L
8-Lead TSSOP-8L Plastic
Surface Mounted Package
8205A Marking:
Month Code
Year Code
Detail F
Pin Style: 1.D 2.S1 3.S1 4.G1 5.G2 6.S2 7.S2 8.D
Note: Green label is used for pb-free packing
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
C
DIM Min. Max.
A - 1.20
A1 0.05 0.15
b 0.19 0.3
C 0.09 0.20
D 2.90 3.10
E 6.20 6.60
E1 4.30 4.50
e 0.65 BSC
L 0.45 0.75
S 0o 8o
*: Typical, Unit: mm
0.25
Detail F
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
8205A
HSMC Product Specification



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HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
Ramp-up
tP
TL
Tsmax
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
Peak temperature
245oC ±5oC
260oC ±5oC
8205A
Spec. No. : MOS200701
Issued Date : 2007.03.01
Revised Date : 2007.03.12
Page No. : 4/4
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
10sec ±1sec
10sec ±1sec
HSMC Product Specification



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