80NF70 Datasheet PDF - ST Microelectronics


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80NF70
ST Microelectronics

Part Number 80NF70
Description STP80NF70
Page 13 Pages

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STP80NF70
N-channel 68 V, 0.0082 , 98 A, TO-220
STripFET™ II Power MOSFET
Features
Type
STP80NF70
VDSS
68 V
RDS(on)
max
< 0.0098
ID
98 A
Exceptional dv/dt capability
100% avalanche tested
Application
Switching applications
Description
The STP80NF70 is a N-channel Power MOSFET
realized with STMicroelectronics unique
STripFET™ process. It has specifically been
designed to minimize input capacitance and gate
charge. The device is therefore suitable in
advanced high-efficiency switching applications.
3
2
1
TO-220
Figure 1. Internal schematic diagram
$4!"OR
'
3
3#
Table 1. Device summary
Order code
STP80NF70
Marking
80NF70
Package
TO-220
Packaging
Tube
June 2010
www.DataSheet4U.net
Doc ID 17610 Rev 1
1/13
www.st.com
13



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Contents
Contents
STP80NF70
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 17610 Rev 1



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STP80NF70
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC=100 °C
IDM(1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
TJ Operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 80 A, di/dt 300 A/µs, VDD V(BR)DSS, TJ TJMAX.
3. Starting TJ = 25 oC, ID = 40 A, VDD = 34 V.
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose(1)
1. 1.6 mm from case for 10 sec.
Electrical ratings
Value
68
± 20
98
68
392
190
1.27
13
700
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
0.79
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 17610 Rev 1
3/13



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Electrical characteristics
2 Electrical characteristics
STP80NF70
(TCASE=25°C unless otherwise specified).
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
68
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
23
4V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 40 A
0.0082 0.0098
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 15 V, ID = 40 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 34 V, ID = 80 A
VGS =10 V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%.
Min. Typ. Max. Unit
- 60 - S
2550
- 550 -
175
pF
pF
pF
75 nC
- 17 - nC
30 nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 34 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
Figure 13 on page 9
Min. Typ. Max. Unit
17 ns
60 ns
--
90 ns
75 ns
4/13 Doc ID 17610 Rev 1




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