7NC80ZFP Datasheet PDF - STMicroelectronics

www.Datasheet-PDF.com

7NC80ZFP
STMicroelectronics

Part Number 7NC80ZFP
Description STP7NC80ZFP
Page 13 Pages


7NC80ZFP datasheet pdf
View PDF for PC
7NC80ZFP pdf
View PDF for Mobile


No Preview Available !

STP7NC80Z - STP7NC80ZFP
STB7NC80Z - STB7NC80Z-1
N-CHANNEL 800V - 1.3- 6.5A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP7NC80Z
www.DataSheet4U.cSoTmP7NC80ZFP
STB7NC80Z
STB7NC80Z-1
800 V
800 V
800 V
800 V
< 1.5
< 1.5
< 1.5
< 1.5
6.5 A
6.5 A
6.5 A
6.5 A
s TYPICAL RDS(on) = 1.3
s EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
TO-220
3
1
D2PAK
3
2
1
TO-220FP
123
I2PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE
MARKING
STP7NC80Z
P7NC80Z
STP7NC80ZFP
P7NC80ZFP
STB7NC80ZT4
B7NC80Z
STB7NC80Z-1
B7NC80Z
May 2003
PACKAGE
TO-220
TO-220FP
D2PAK
I2PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
1/13



No Preview Available !

STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
www.DataSheet4U.com ID
IDM ( )
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max.Operating Junction Temperature
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
Value
STP7NC80Z
STB7NC80Z
STB7NC80Z-1
STP7NC80ZFP
800
800
±25
6.5 6.5 (*)
4 4(*)
26 26 (*)
135 40
1.08 0.32
±50
3
3
-- 2000
-65 to 150
150
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220 / D2PAK /
I2PAK
0.93
30
300
TO-220FP
3.13
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
6.5
290
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
αT Voltage Thermal Coefficient
Rz Dynamic Resistance
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
ID = 20 mA,
Min.
25
Typ.
1.3
90
Max.
Unit
V
10-4/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13



No Preview Available !

STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
800
BVDSS/TJ Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
0.9
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
www.DataSheet4U.com
VGS(th)
Gate-body Leakage
Current (VDS = 0)
Gate Threshold Voltage
VGS = ± 20V
VDS = VGS, ID = 250µA
±10
345
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.3 A
1.3 1.5
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3.3 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Test Conditions
VDD = 400 V, ID = 3 A
RG = 4.7VGS = 10 V
( see test circuit, Figure 3)
VDD = 640 V, ID = 6 A,
VGS = 10V
Min.
Typ.
6
2350
164
17
Typ.
33
12
43
12
15
Max.
Max.
58
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V, ID =6 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
13
13
20
Max.
Unit
V
V/°C
µA
µA
µA
V
Unit
S
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD =6.1 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6 A, di/dt = 100A/µs
VDD = 40V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. VBV=αT(25°-T) BVGSO(25°)
Min.
Typ.
680
6
18
Max.
6.5
26
1.6
Unit
A
A
V
ns
µC
A
3/13



No Preview Available !

STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
Safe Operating Area For TO-220/I2PAK
Thermal Impedance For TO-220/D2PAK/I2PAK
www.DataSheet4U.com
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/13



7NC80ZFP datasheet pdf
Download PDF
7NC80ZFP pdf
View PDF for Mobile


Related : Start with 7NC80ZF Part Numbers by
7NC80ZFP STP7NC80ZFP 7NC80ZFP
STMicroelectronics
7NC80ZFP pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact