7N50 Datasheet PDF - Unisonic Technologies


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7N50
Unisonic Technologies

Part Number 7N50
Description 500 Volts N-CHANNEL POWER MOSFET
Page 7 Pages

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7N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
7.0A, 500V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC 7N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 7N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 1.0@ VGS=10V, ID=3.5A
* High Switching Speed
* 100% Avalanche Tested
1
1
SYMBOL
2.Drain
Power MOSFET
TO-220
TO-220F1
TO-220F2
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
7N50L-TA3-T
7N50G-TA3-T
7N50L-TF1-T
7N50G-TF1-T
7N50L-TF2-T
7N50G-TF2-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
GDS
Packing
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7N50
MARKING
Preliminary
Power MOSFET
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7N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
Drain Current
Avalanche Current (Note 2)
Continuous (TC=25°C)
Pulsed (Note 2)
VGSS
ID
IDM
IAR
±30
7 (Note 5)
28 (Note 5)
7
V
A
A
A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 4)
EAS
EAR
270 mJ
8.9 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
TO-220
142 W
Power Dissipation (TC=25°C) TO-220F1
PD
48 W
TO-220F2
50 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 7A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 7A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.88
2.6
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
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7N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VDS=400V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=400V, ID=7A
(Note 1, 2)
VDD=250V, ID=7A, RG=25
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=7A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr IS=7A, VGS=0V,
QRR dIF/dt=100A/µs (Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
500 V
1
10
µA
+100 nA
-100 nA
3.0 5.0
0.8 1.0
V
720 940
95 190
9 13.5
pF
pF
pF
12.8 16.6
3.7
5.8
6 20
55 120
25 60
35 80
nC
nC
nC
ns
ns
ns
ns
7
28
1.4
275
0.04
A
A
V
ns
µC
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