7N10Z Datasheet PDF - Unisonic Technologies

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7N10Z
Unisonic Technologies

Part Number 7N10Z
Description N-CHANNEL POWER MOSFET
Page 6 Pages


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UNISONIC TECHNOLOGIES CO., LTD
7N10Z
7A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N10Z is an N-Channel enhancement mode power
MOSFET providing customers with excellent switching performance
and minimum on-state resistance. The UTC 7N10Z uses planar
stripe and DMOS technology to provide perfect quality. This device
can also withstand high energy pulse in the avalanche and the
commutation mode.
The UTC 7N10Z is generally applied in low voltage applications,
such as DC motor controls, audio amplifiers and high efficiency
switching DC/DC converters.
FEATURES
* RDS(ON) < 0.35@ VGS =10V, ID =3.5A
* Fast Switching
* Improved dv/dt Capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N10ZL-TN3-R
7N10ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
www.unisonic.com.tw
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7N10Z
MARKING
Power MOSFET
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7N10Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain -Source Voltage
Gate-Source Voltage
VDSS
VGSS
100 V
±20 V
Continuous Drain Current TC =25°C
ID
7A
Pulsed Drain Current (Note 2)
IDM
28 A
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation
Derate above 25°C
EAS
PD
50 mJ
2.5 W
0.02 W/°C
Operating Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L =26mH, IAS =7A, VDD =25V, RG =25Starting TJ =25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
Note: When mounted on the minimum pad size recommended (PCB Mount)
50
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS =0V, ID =250µA
VDS =100V, VGS =0V
VGS =±20V, VDS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID =250µA
VGS =10V, ID =3.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=50V, ID=1.3A
(Note 1,2)
VDD=30V, ID=0.5A, RG=25
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =7A, VGS =0V
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
100 V
1 µA
±10 µA
2.0 4.0 V
0.145 0.35
420 450
80 100
11 15
pF
pF
pF
9.5
1
2.5
33 40
35 42
94 116
35 40
nC
nC
nC
ns
ns
ns
ns
7A
28 A
1.5 V
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7N10Z
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
RG
VGS
DUT
ISD
+
VDS
L
-
Driver
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
ISD
(DUT)
VDS
(DUT)
D=
Gate
Gate
Pulse
Pulse
Width
Period
10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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