7N10Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain -Source Voltage
Gate-Source Voltage
VDSS
VGSS
100 V
±20 V
Continuous Drain Current TC =25°C
ID
7A
Pulsed Drain Current (Note 2)
IDM
28 A
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation
Derate above 25°C
EAS
PD
50 mJ
2.5 W
0.02 W/°C
Operating Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L =26mH, IAS =7A, VDD =25V, RG =25Ω Starting TJ =25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
Note: When mounted on the minimum pad size recommended (PCB Mount)
50
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS =0V, ID =250µA
VDS =100V, VGS =0V
VGS =±20V, VDS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID =250µA
VGS =10V, ID =3.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=50V, ID=1.3A
(Note 1,2)
VDD=30V, ID=0.5A, RG=25Ω
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =7A, VGS =0V
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
100 V
1 µA
±10 µA
2.0 4.0 V
0.145 0.35 Ω
420 450
80 100
11 15
pF
pF
pF
9.5
1
2.5
33 40
35 42
94 116
35 40
nC
nC
nC
ns
ns
ns
ns
7A
28 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-762.B
