6N60A Datasheet PDF - nELL


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6N60A
nELL

Part Number 6N60A
Description N-Channel Power MOSFET
Page 10 Pages

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SEMICONDUCTOR
6N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(6A, 600Volts)
DESCRIPTION
The Nell 6N60 is a three-terminal silicon
device with current conduction capability
of 6A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 1.5Ω@VGS = 10V
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance
(CRSS = 10pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-251 (I-PAK)
(6N60F)
D
D
G
S
TO-252 (D-PAK)
(6N60G)
GDS
TO-220AB
(6N60A)
GDS
TO-220F
(6N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
6
600
1.5 @ VGS = 10V
25
D (Drain)
G
(Gate)
S (Source)
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SEMICONDUCTOR
6N60 Series RRooHHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
Gate to Source voltage
Continous Drain Current
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
TC=25°C
TC=100°C
IAR=6A, RGS=50Ω, VGS=10V
IAS=6A, L = 14mH
TO-251/ TO-252
PD Total power dissipation
TC=25°C TO-220AB
TO-220F
TJ
TSTG
Operation junction temperature
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.IAS = 6A, VDD = 50V, L = 14mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 6A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
VALUE
UNIT
600
600 V
±30
6
3.7
A
24
6
13
mJ
440
4.5 V /ns
55
125 W
40
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-251/ TO-252
TO-220AB
TO-220F
TO-251/TO-252
TO-220AB
TO-220F
Min.
Typ.
Max.
2.3
1.0
3.3
110
62.5
62.5
UNIT
ºC/W
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SEMICONDUCTOR
6N60 Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS
▲ ▲V(BR)DSS/ TJ
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
ID = 250µA, VGS = 0V
ID = 250µA, VDS = VGS
600
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID = 3A, VGS = 10V
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
2.0
CISS
Input capacitance
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V,
ID = 6A, RGS = 25Ω(Note 1, 2)
tf Fall time
QG
QGS
QGD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V, ID = 6A
(Note 1, 2)
Typ.
0.53
1.0
770
95
10
20
70
40
45
20
5
9.5
Max. UNIT
V
V/ºC
10
μA
100
100
-100
nA
1.5 Ω
4.0 V
1000
120
pF
13
50
150
ns
90
100
25
uC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 6A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
6
ISM Pulsed source current
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
G
(Gate)
S (Source)
ISD = 6A, VGS = 0V,
dIF/dt = 100A/µs
A
24
280 ns
2.3 µC
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SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
6 = 6A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
F = TO-251(I-PAK)
G = TO-252(D-PAK)
6N60 Series RRooHHSS
Nell High Power Products
6 N 60 A
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
VGS
(Driver)
lSD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
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