6N60 Datasheet PDF - INCHANGE


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6N60
INCHANGE

Part Number 6N60
Description N-Channel Mosfet Transistor
Page 2 Pages

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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
6N60
·FEATURES
·Drain Current –ID= 6A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600 V
VGS Gate-Source Voltage-Continuous
±20
V
ID Drain Current-Continuous
6A
IDM Drain Current-Single Plused
24 A
PD Total Dissipation @TC=25
125 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1 /W
62.5 /W
isc websitewww.iscsemi.cn
1



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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
6N60
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 3A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD Forward On-Voltage
IS= 6A; VGS= 0
MIN MAX UNIT
600 V
24V
1.2 Ω
±100
nA
1 μA
1.8 V
·
isc websitewww.iscsemi.cn
2




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