6N60 Datasheet PDF - ART CHIP


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6N60
ART CHIP

Part Number 6N60
Description N-CHANNEL MOSFET
Page 6 Pages

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6N60
Power Mosfet
6.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) = 1.5@VGS = 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
*Pb-free plating product number: 6N60L
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
6N60-x-TA3-T
6N60L-x-TA3-T
Package
TO-220
Pin Assignment
12
GD
3
S
Packing
Tube
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6N60
Power Mosfet
ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
6N60-A
6N60-B
VDSS
600
650
Gate-Source Voltage
VGSS
±30
Avalanche Current (Note 1)
Continuous Drain Current
TC = 25°C
IAR 6.2
ID 6.2
TC = 100°C
3.9
Pulsed Drain Current (Note 1)
Avalanche Energy
Single Pulsed (Note 2)
IDM
EAS
24.8
440
Repetitive (Note 1)
EAR
13
Power Dissipation
Junction Temperature
PD 62.5
TJ +150
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θJA
θJC
RATING
62
2
UNIT
V
V
V
A
A
A
A
mJ
mJ
W
°C
°C
°C
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25 , unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage 6N60-A BVDSS
6N60-B
VGS = 0V, ID = 250µA
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
IDSS
IGSS
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
BVDSS/ TJ ID = 250 µA, Referenced to
Coefficient
25°C
MIN
600
650
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.1A
2.0
DYNAMIC CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=300V, ID =6.2A, RG =25
(Note 4, 5)
VDS=480V, ID=6.2A, VGS=10 V
(Note 4, 5)
TYP MAX UNIT
10
100
-100
0.53
V
V
µA
nA
nA
V/°C
4.0 V
1.5
20 50
70 150
40 90
45 100
20 25
4.9
9.4
ns
ns
ns
ns
nC
nC
nC
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6N60
Power Mosfet
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 6.2 A
Maximum Continuous Drain-Source Diode IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR VGS = 0 V, IS = 6.2 A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/µs (Note 4)
1. Repetitive Rating : Pulse width limited by TJ
2. L = 16.8mH, IAS = 6A, VDD = 90V, RG = 25 , Starting TJ = 25°C
3. ISD 6.2A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
MIN TYP MAX UNIT
1.4 V
6.2 A
24.8 A
290 ns
2.35 ns
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TEST CIRCUITS AND WAVEFORMS
6N60
Power Mosfet
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
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Fig. 1B Peak Diode Recovery dv/dt Waveforms
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