60N10 Datasheet PDF - Inchange Semiconductor

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60N10
Inchange Semiconductor

Part Number 60N10
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
60N10
·DESCRIPTION
·Drain Current ID= 40A@ TC=25
·Drain Source Voltage-
: VDSS= 100V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
60
±30
40
V
V
A
ID(puls)
Pulse Drain Current
180 A
Ptot Total Dissipation@TC=25
150 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.83 /W
40 /W
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
60N10
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=250µA
IS=60A ;VGS= 0
VGS= 10V; ID=20A
VGS= ±30V;VDS= 0
VDS= 100V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=30A;
VDD=50V;
RL=50Ω
MIN TYPE MAX UNIT
100 V
2.0 4.0 V
2.5 V
0.03 Ω
±100 nA
10 µA
4800
395 pF
950
280
126
ns
210
630
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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