50N025-05P Datasheet PDF - Vishay Siliconix


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50N025-05P
Vishay Siliconix

Part Number 50N025-05P
Description SUD50N025-05P
Page 7 Pages

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SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V
0.0076 @ VGS = 4.5 V
ID (A)a, e
89
80
Qg (Typ)
30 nC
TO-252
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
D RoHS Compliant
APPLICATIONS
D DC/DC Conversion, Low-Side
Desktop PC
Notebook PC
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N025-05P—E3 (Lead (Pb)-Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
TC = 25_C
TA = 25_C
L = 0.1 mH
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
25
"20
89a, e
80a, e
36b, c
30b, c
100
55
7.7b, c
45
101
83a
58a
11.5b, c
8.0b, c
55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case
t p 10 sec
Steady State
RthJA
RthJC
Notes:
a. Based on TC = 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 90 _C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 73362
S-50935—Rev. A, 08-May-05
Typical
10
1.5
Maximum
13
1.8
Unit
_C/W
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SUD50N025-05P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
DVDS/TJ
DVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 12 V, VGS = 0 V, f = 1 MHz
VDS = 12 V, VGS = 10 V, ID = 50 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS
ISM
VSD
trr
Qrr
ta
tb
VDS = 12 V, VGS = 4.5 V, ID= 50 A
f = 1 MHz
VDD = 12 V, RL = 0.24 W
ID ^ 50 A, VGEN = 4.5 V, Rg = 1 W
VDD = 12 V, RL = 0.24 W
ID ^ 50 A, VGEN = 10 V, Rg = 1 W
TC = 25_C
IS = 30 A
IF = 20 A, di/dt = 100 A/ms, TJ = 25_C
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
25 V
20
6.0
mV/_C
1.4 2.4 V
"100
nA
1
10 mA
50 A
0.0042
0.0062
65
0.0052
0.0076
W
S
3600
790
430
63 95
30 45
10.5
10.5
0.5 1.0 1.5
24 36
13 20
24 36
7.5 12
11 17
11 17
29 44
8 12
pF
nC
W
ns
55
A
100
0.9 1.5 V
34 51 ns
25 38 nC
17
ns
17
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73362
S-50935—Rev. A, 08-May-05



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SUD50N025-05P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
VGS = 10 thru 5 V
4V
80
20
16
Transfer Characteristics
60 12
40
20
0
0.0
2V 3V
0.4 0.8 1.2 1.6
VDS Drain-to-Source Voltage (V)
2.0
On-Resistance vs. Drain Current and Gate Voltage
0.012
0.010
0.008
0.006
0.004
VGS = 4.5 V
VGS = 10 V
0.002
0.000
0
20 40 60 80
ID Drain Current (A)
Gate Charge
10
ID = 50 A
8
100
6 VDS = 12 V
VDS = 18 V
4
2
0
0 8 16 24 32 40 48 56 64
Qg Total Gate Charge (nC)
Document Number: 73362
S-50935—Rev. A, 08-May-05
8
4
0
1.0
4800
TC = 125_C
25_C
55_C
1.5 2.0 2.5 3.0
VGS Gate-to-Source Voltage (V)
3.5
Capacitance
4000
3200
Ciss
2400
1600
Coss
800
Crss
0
0
5
10 15 20
VDS Drain-to-Source Voltage (V)
25
On-Resistance vs. Junction Temperature
1.8
1.6 ID = 20 A
VGS = 10 V
1.4 VGS = 4.5 V
1.2
1.0
0.8
0.6
50 25
0 25 50 75 100 125 150 175
TJ Junction Temperature (_C)
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SUD50N025-05P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
100
10 TJ = 150_C
0.030
0.025
On-Resistance vs. Gate-to-Source Voltage
ID = 20 A
1
0.1
0.01
TJ = 25_C
0.001
0.00
0.2 0.4 0.6 0.8 1.0
VSD Source-to-Drain Voltage (V)
1.2
0.020
0.015
0.010
0.005
0.000
2
TJ = 125_C
TJ = 25_C
3 4 5 6 7 8 9 10
VGS Gate-to-Source Voltage (V)
Threshold Voltage
0.6
0.3
ID = 250 mA
0.0
0.3
0.6
0.9
Single Pulse Power, Junction-to-Ambient
720
600
480
TA = 25_C
360
240
120
1.2
50 25 0
25 50 75 100 125 150 175
0
0.001
0.01
TJ Temperature (_C)
Safe Operating Area, Junction-to-Case
1000
0.1 1
Time (sec)
10
*Limited by rDS(on)
100
10 ms
100 ms
10 1 ms
10 ms
1 100 ms, dc
TC = 25_C
Single Pulse
0.1
0.1 1
10 100
VDS Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
100 1000
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Document Number: 73362
S-50935—Rev. A, 08-May-05




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