4N100 Datasheet PDF - UTC

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4N100
UTC

Part Number 4N100
Description N-CHANNEL POWER MOSFET
Page 6 Pages


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UNISONIC TECHNOLOGIES CO., LTD
4N100
Preliminary
4A, 1000V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N100 is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with high
switching speed and high breakdown voltage.
FEATURES
* RDS(ON) < 3.5@ VGS=10V, ID=2A
* High switching speed
* High breakdown voltage
SYMBOL
2.Drain
1
1
1
Power MOSFET
TO-220
TO-220F1
TO-220F2
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N100L-TA3-T
4N100G-TA3-T
4N100L-TF1-T
4N100G-TF1-T
4N100L-TF2-T
4N100G-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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4N100
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Drain-Gate Voltage (RGS=2k )
VDSS
VDGR
1000
1000
V
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
Pulsed (TC=25°C)
ID
IDM
4
8
A
A
Single Pulsed Avalanche Energy (Note 2)
EAS
320 mJ
TO-220
140 W
Power Dissipation (TC=25°C) TO-220F1
PD
38 W
TO-220F2
40 W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=40mH, IAS=4A, VDD= 50V, RG=25, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-220F1
TO-220F2
TO-220
Junction to Case
TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.89
3.25
3.1
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=0.25mA, VGS=0V, TJ=25°C
VDS=1000V, VGS=0V, TJ=25°C
VDS=1000V, VGS=0V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=2A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
tD(ON)
tR
tD(OFF)
tF
VDD=30V, VGS=10V, ID=0.5A,
RGS=25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS TC=25°C
Maximum Body-Diode Pulsed Current
ISM TC=25°C
Drain-Source Diode Forward Voltage
VSD IF=4A, VGS=0V
MIN TYP MAX UNIT
1000
10
100
+100
-100
V
µA
µA
nA
nA
3 5V
3.5
1100 1500
90 150
13 25
pF
pF
pF
85 ns
115 ns
180 ns
100 ns
4A
8A
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N100
Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
3mA
12V
200nF
50k
VGS
300nF
Same Type
as DUT
DUT
Gate Charge Test Circuit
VGS
10V
VDS
QGS
QG
QGD
Charge
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
10V
tP
VDS
RG ID
L
DUT
VDD
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDS(t)
tP Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N100
Preliminary
TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
RG
VGS
DUT
ISD
+
VDS
L
-
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VDD
VGS
(Driver)
D=
Gate
Gate
Pulse
Pulse
Width
Period
10V
ISD
(DUT)
VDS
(DUT)
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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