4435BZ Datasheet PDF - Fairchild Semiconductor


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4435BZ
Fairchild Semiconductor

Part Number 4435BZ
Description FDS4435BZ
Page 6 Pages

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FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m
Features
„ Max rDS(on) = 20mat VGS = -10V, ID = -8.8A
„ Max rDS(on) = 35mat VGS = -4.5V, ID = -6.7A
„ Extended VGSS range (-25V) for battery applications
„ HBM ESD protection level of ±3.8KV typical (note 3)
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability
„ Termination is Lead-free and RoHS compliant
June 2007
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
Pin 1
SO-8
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-30
±25
-8.8
-50
2.5
1.0
24
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
25
50
°C/W
Device Marking
FDS4435BZ
Device
FDS4435BZ
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
1
www.fairchildsemi.com



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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
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Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
-30
ID = -250µA, referenced to 25°C
-21
VDS = -24V, VGS = 0V
VGS = ±25V, VDS = 0V
V
mV/°C
1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250µA
ID = -250µA, referenced to 25°C
VGS = -10V, ID = -8.8A
VGS = -4.5V, ID = -6.7A
VGS = -10V, ID = -8.8A, TJ = 125°C
VDS = -5V, ID = -8.8A
-1
-2.1
6
16
26
22
24
-3 V
mV/°C
20
35 m
28
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -15V, VGS = 0V,
f = 1MHz
f = 1MHz
1385
275
230
4.5
1845
365
345
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6
VGS = 0V to -10V
VGS = 0V to -5V
VDD = -15V,
ID = -8.8A
10 20 ns
6 12 ns
30 48 ns
12 22 ns
28 40 nC
16 23 nC
5.2 nC
7.4 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -8.8A (Note 2)
-0.9 -1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -8.8A, di/dt = 100A/µs
29 44 ns
23 35 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
2
www.fairchildsemi.com



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Typical Characteristics TJ = 25°C unless otherwise noted
50
VGS = -10V
VGS = -5V
40
VGS = -4.5V
30
20 VGS = -4V
10
0
0
VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
123
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4
Figure 1. On-Region Characteristics
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4.0
VGS = -3.5V
3.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.0
VGS = -4.5V
2.5
VGS = -4V
VGS = -5V
2.0
1.5
VGS = -10V
1.0
0.5
0
10 20 30 40
-ID, DRAIN CURRENT(A)
50
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -8.8A
VGS = -10V
1.4
60
ID = -8.8A PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
1.2 40
1.0
TJ = 125oC
30
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
20
10
2
TJ = 25oC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VDS = -5V
30
20
TJ = 150oC
10
0
1
TJ = 25oC
TJ =-55oC
234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
100
VGS = 0V
10
1
0.1
0.01
0.001
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.0001
0.0
0.2 0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
3
www.fairchildsemi.com



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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = -8.8A
8
6
VDD = -10V
VDD = -15V
VDD = -20V
4
4000
1000
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Ciss
Coss
2
0
0 5 10 15 20 25
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
30
20
10
TJ = 125oC
TJ = 25oC
1
0.01
0.1 1
tAV, TIME IN AVALANCHE(ms)
10 30
Figure9. Unclamped Inductive
Switching Capability
10
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
30
10-4
VDS = 0V
10-5
10-6
TJ = 125oC
10-7
TJ = 25oC
10-8
10-9
0
5 10 15 20 25
-VGS, GATE TO SOURCE VOLTAGE(V)
30
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
100
8
VGS = -10V
6
4 VGS = -4.5V
2
RθJA = 50oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
150
10 100us
1ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
1
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
TA = 25oC
10
10ms
100ms
1s
10s
DC
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C
4
www.fairchildsemi.com




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