3SK231 Datasheet PDF - NEC

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3SK231
NEC

Part Number 3SK231
Description MOS FIELD EFFECT TRANSISTOR
Page 7 Pages


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Noise Figure NF = 2.0 dB TYP. (@ = 900 MHz)
• High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)
• Enhancement Typ.
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package : 4 Pins Mini Mold Package. (SC-61)
PACKAGE DIMENSIONS
(Unit: mm)
+0.2
2.8 0.3
+0.2
1.5 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSX
18
Gate1 to Source Voltage
VG1S
±8 (±10)*
Gate2 to Source Voltage
VG2S
±8 (±10)*
Gate1 to Drain Voltage
VG1D
18
Gate2 to Drain Voltage
VG2D
18
Drain Current
ID 25
Total Power Dissipation
PD
200
Channel Temperature
Tch
125
Storage Temperature
Tstg 55 to +125
*RL 10 k
V
V
V
V
V
mA
mW
°C
°C
5° 5°
5° 5°
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltages or fields.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10030EJ01V0DS (1st edition)
(Previous No. P10588EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark ! shows major revised points.
NEC Corporation 1993
NEC Compound Semiconductor Devices 2001
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3SK231
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Drain to Source Breakdown Voltage BVDSX
18
Drain Current
IDSx 0.01
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
VG1S(off)
VG2S(off)
1.0
+0.6
+1.1
Gate1 Reverse Current
Gate2 Reverse Current
IG1SS
IG2SS
Forward Transfer Admittance
yfs
15 19.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Ciss
Coss
Crss
Gps
NF1
1.0
0.7
14.0
1.5
1.0
0.015
17.5
2.0
MAX.
10.0
+1.0
+1.6
±20
±20
24
2.0
1.3
0.03
21.0
3.0
UNIT
V
mA
V
V
nA
nA
mS
pF
pF
pF
dB
dB
TEST CONDITIONS
VG1S = VG2S = 2 V, ID = 10 µA
VDS = 6 V, VG2S = 4.5 V, VG1S = 0.75 V
VDS = 6 V, VG2S = 3 V, ID = 10 µA
VDS = 6 V VG1S = 3 V, ID = 10 µA
VDS = VG2S = 0 V, VG1S = ±8 V
VDS = VG1S = 0 V, VG2S = ±8 V
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 kHz
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 MHz
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 900 MHz
 IDSX Classification
Rank
U1C/UAC *
U1D/UAD *
Marking
U1C
U1D
IDSX (mA)
0.01 to 4.0 2.0 to 10.0
* Old Specification / New Specification
2 Data Sheet PU10030EJ01V0DS
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CHARACTERISTICS CURVE (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
400
300
200
100
0 25 50 75 100 125
TA-Ambient Temperature-°C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
25 VDS = 6 V
20
VG2S = 3.5 V
3.0 V
15 2.5 V
10
5
0
-1
2.0 V
1.5 V
0123
VG1S-Gate1 to Source Voltage-V
4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40 VDS = 6 V
f = 1 KHz
32
5V
24 VG2S = 6 V
5V
16 4 V
3V
8
2V
0 4 8 12 16 20
ID-Drain Current-mA
3SK231
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50 VG2S = 4.5 V
40
30
VG1S = 3 V
2.5V
2.0V
1.5V
20
10 1.0V
0.5V
05
VDS-Drain to Source Voltage-V
10
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
25 VDS = 6 V
f = 1 KHz
20
VG2S = 5 V
15
4V
10 3 V
5 2V
0
-1 0 1 2 3
VG1S-Gate1 to Source Voltage-V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
ID = 10 mA
(at VDS = 6 V
2.0 VG2S = 4.5 V)
f = 1 MHz
1.5
4
1.0
0.5
0 1.0 2.0 3.0 4.0 5.0
VG2S-Gate2 to Source Voltage-V
Data Sheet PU10030EJ01V0DS
3
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OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
ID = 10 mA
(at VDS = 6 V
2.0 VG2S = 4.5 V)
f = 1 MHz
1.5
1.0
0.5
0 1.0 2.0 3.0 4.0 5.0
VG2S-Gate2 to Source Voltage-V
3SK231
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
f = 900 MHz
20 ID = 10 mA
(at VDS = 6 V
VG2S = 4.5 V)
10
Gps
50
10
20
00
NF
1.0 2.0 3.0 4.0
VG2S-Gate2 to Source Voltage-V
5.0
4 Data Sheet PU10030EJ01V0DS
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