3SK231 Datasheet PDF - NEC

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3SK231
NEC

Part Number 3SK231
Description MOS FIELD EFFECT TRANSISTOR
Page 7 Pages

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Noise Figure NF = 2.0 dB TYP. (@ = 900 MHz)
• High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)
• Enhancement Typ.
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package : 4 Pins Mini Mold Package. (SC-61)
PACKAGE DIMENSIONS
(Unit: mm)
+0.2
2.8 0.3
+0.2
1.5 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSX
18
Gate1 to Source Voltage
VG1S
±8 (±10)*
Gate2 to Source Voltage
VG2S
±8 (±10)*
Gate1 to Drain Voltage
VG1D
18
Gate2 to Drain Voltage
VG2D
18
Drain Current
ID 25
Total Power Dissipation
PD
200
Channel Temperature
Tch
125
Storage Temperature
Tstg 55 to +125
*RL 10 k
V
V
V
V
V
mA
mW
°C
°C
5° 5°
5° 5°
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltages or fields.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10030EJ01V0DS (1st edition)
(Previous No. P10588EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark ! shows major revised points.
NEC Corporation 1993
NEC Compound Semiconductor Devices 2001
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