3DK2222A Datasheet PDF - Jiangsu Changjiang Electronics

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3DK2222A
Jiangsu Changjiang Electronics

Part Number 3DK2222A
Description TRANSISTOR
Page 3 Pages


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
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3DK2222A
TRANSISTOR ( NPN )
FEATURES
y Epitaxial planar die construction
y Complementary PNP Type available(MMBT2907ALT1)
MARKING: 1P1
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
MAXIMUM RATINGS* TA=25unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ, Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICSTamb=25
Value
75
40
6
600
300
-55to+150
unless otherwise specified
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
HFE(1)
HFE(2)
HFE(3)
IC= 10μAIE=0
IC= 10mAIB=0
IE=10μAIC=0
VCB=70 V , IE=0
VCE=60V , VBE(off)=3V
VEB= 3V , IC=0
VCE=10V, IC= 150mA
VCE=10V, IC= 0.1mA
VCE=10V, IC= 500mA
75
40
6
100
40
42
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
VBE(sat)
fT
td
tr
tS
tf
IC=500 mA, IB= 50mA
VCE=20V, IC= 20mA
f=100MHz
VCC=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
300
Units
V
V
V
mA
mW
MAX
0.1
0.1
0.1
300
UNIT
V
V
V
μA
μA
μA
0.6
0.3 V
1.2 V
MHz
10 nS
25 nS
225 nS
60 nS



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Typical Characteristics
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3DK2222A



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3DK2222A TRANSISTOR 3DK2222A
Jiangsu Changjiang Electronics
3DK2222A pdf

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