2sc4159 Datasheet PDF - Inchange Semiconductor

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2sc4159
Inchange Semiconductor

Part Number 2sc4159
Description Silicon NPN Power Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4159
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V (Min)
·Large Current Capacity
·Complement to Type 2SA1606
APPLICATIONS
·Designed for high-voltage switching, AF power amplifier,
100W output predrivers.
i.cnABSOLUTE MAXIMUM RATINGS(Ta=25)
.iscsemSYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
180 V
wwwVCEO Collector-Emitter Voltage
160 V
VEBO Emitter-Base Voltage
6.0 V
IC Collector Current-Continuous
1.5 A
ICM Collector Current-Peak
Total Power Dissipation
PC @ TC=25
TJ Junction Temperature
3A
15 W
150
Tstg Storage Temperature Range
www.DataSheet4U.com
-55~150
isc Websitewww.iscsemi.cn



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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4159
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE=
180
160
V
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
0.3 V
VBE(on) Base-Emitter On Voltage
IC= 10mA; VCE= 5V
1.5 V
ICBO Collector Cutoff Current
VCB= 120V; IE= 0
10 μA
IEBO Emitter Cutoff Current
i.cnhFE DC Current Gain
.iscsemfT Current-Gain—Bandwidth Product
COB Output Capacitance
wwwSwitching Times
VEB= 4V; IC= 0
IC= 300mA; VCE= 5V
IC= 50mA; VCE= 10V
IE= 0; VCB= 10V; f= 1.0MHz
10 μA
60 200
100 MHz
23 pF
ton Turn-on Time
tstg Storage Time
IC= 0.5A, RL= 40Ω,
IB1= -IB2= 50mA, VCC= -20V;
PW= 20μs
0.15 μs
0.81 μs
tf Fall Time
0.48 μs
‹ hFE Classifications
DE
60-120 100-200
www.DataSheet4U.com
isc Websitewww.iscsemi.cn
2



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