MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOSFET
The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
• Low on-state resistance
RDS(on)1 = 15.0 mΩ MAX. (VGS = 10 V, ID = 15 A)
• Low QGD: QGD = 2.8 nC TYP.
• 4.5 V drive available
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
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Document No. D18034EJ2V0DS00 (2nd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
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