2SK4057 Datasheet PDF - NEC


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2SK4057
NEC

Part Number 2SK4057
Description MOS FIELD EFFECT TRANSISTOR
Page 8 Pages

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4057
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 15.0 mΩ MAX. (VGS = 10 V, ID = 15 A)
Low QGD: QGD = 2.8 nC TYP.
4.5 V drive available
<R>
ORDERING INFORMATION
PART NUMBER
2SK4057(1)-S27-AY Note
2SK4057-ZK-E1-AY Note
2SK4057-ZK-E2-AY Note
PACKAGE
TO-251 (MP-3-b)
TO-252 (MP-3ZK)
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±30
±100
Total Power Dissipation (TC = 25°C)
PT1 19
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 17
EAS 28.9
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18034EJ2V0DS00 (2nd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006



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2SK4057
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 25 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 7.5 A
VGS = 10 V, ID = 15 A
RDS(on)2 VGS = 4.5 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Ciss
Coss
Crss
td(on)
tr
td(off)
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 12 V, ID = 15 A
VGS = 10 V
RG = 3 Ω
Fall Time
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDD = 12 V
VGS = 12 V
ID = 30 A
Gate Resistance
Body Diode Forward Voltage Note
RG
VF(S-D)
IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr IF = 30 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/μs
Note Pulsed
MIN.
1.5
5
TYP.
2.1
9.4
11.4
18.5
720
210
90
7.1
3.3
23
5.1
14.5
1.9
2.8
3.4
0.95
26
22
MAX.
10
±100
2.5
15.0
25.0
1.5
UNIT
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Ω
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18034EJ2V0DS



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2SK4057
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
15
10
5
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
ID(pulse)
ID(DC)
P/W = 100 μs
10
RDS(on) Limited
(VGS =10 V)
1 ms
1 Power Dissipation
10 ms
TC = 25°C
Single pulse
0.1
0.1
1
10 100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs CASE TEMPERATURE
35
30
25
20
15
10
5
0
0 50 100 150 200
TC - Case Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10 Rth(ch-C) = 6.58°C/W
1
0.1
100 μ
1m
10 m
Single Pulse
100 m
1
10
PW - Pulse Width – s
100
1000
Data Sheet D18034EJ2V0DS
3



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DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 10 V
50
4.5 V
Pulsed
0
01234
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = 10 V
2.5 ID = 1 mA
2
1.5
1
0.5
0
-75 -25 25 75 125
Tch - Channel Temperature - °C
175
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
Pulsed
40
30
VGS = 4.5 V
20
10
0
1
10 V
10 100
ID - Drain Current - A
1000
2SK4057
FORWARD TRANSFER CHARACTERISTICS
100
TcTch = 55°C
10 25°C
h =25°C
1 50°C
-75°C
125°C
550.1 150°C
0.01
0.001
0
VDS = 10 V
Pulsed
1234
VGS - Gate to Source Voltage - V
5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
Tch = 55°C
25°C
25°C
50°C
75°C
125°C
150°C
1
0.1
0.1
VDS = 10 V
Pulsed
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
45
40
35
30
25
20
15
10
5
0
0
ID = 30 A
15 A
6A
Pulsed
5 10 15 20
VGS - Gate to Source Voltage - V
4 Data Sheet D18034EJ2V0DS




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