2SK4019 Datasheet PDF - Toshiba Semiconductor

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2SK4019
Toshiba Semiconductor

Part Number 2SK4019
Description DC-DC Converter and Motor Drive Applications
Page 6 Pages


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TOSHIBA Field Effect Transistor
2SK4019
www.DataSheet4U.com
Silicon N-Channel MOS Type (L2πMOS V)
2SK4019
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drainsource ON-resistance
: RDS (ON) = 0.17 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 4.5 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
6.5±0.2
5.2±0.2
0.9
2.3 2.3
Unit: mm
0.6 MAX.
1.1±0.2
0.6 MAX
Absolute Maximum Ratings (Ta = 25°C)
123
Characteristic
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
100
100
±20
5
20
20
180
5
2
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
0.8 MAX.
1.1 MAX.
0.6±0.15
0.6±0.15
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
6.25 °C / W
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 11.6 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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Electrical Characteristics (Ta = 25°C)
2SK4019
www.DataSheet4U.com
Characteristic
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
IGSS
IDSS
Test Condition
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Min Typ. Max Unit
— — ±10 μA
— — 100 μA
100 —
V
0.8 — 2.0
V
— 0.22 0.30
Ω
— 0.17 0.23
2.0 4.5
S
— 500 —
— 80 — pF
— 190 —
— 17 —
Switching time
Turnon time
Fall time
ton
tf
— 25 —
ns
— 50 —
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
Gatesource charge
Qgs VDD 80 V, VGS = 10 V, ID = 5 A
Gatedrain (“Miller”) charge
Qgd
— 195 —
— 22 —
— 15 —
—7—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / μs
Min Typ. Max Unit
—— 5 A
— — 20 A
— — 1.7 V
— 160 —
ns
— 0.28 —
μC
Marking
K4019
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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