2SK4017 Datasheet PDF - Toshiba Semiconductor

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2SK4017
Toshiba Semiconductor

Part Number 2SK4017
Description DC-DC Converter and Motor Drive Applications
Page 6 Pages


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2SK4017
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
2SK4017
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drainsource ON-resistance: RDS (ON) = 0.07 Ω (typ.)
z High forward transfer admittance: |Yfs| = 6.0 S (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drainsource voltage
Draingate voltage (RGS = 20 kΩ)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
5
20
20
40.5
5
2
150
55 to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.9 1.1 ± 0.2
0.6 MAX.
2.3 2.3
123
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
HEAT SINK
3. SOURSE
2
1
3
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
6.25 °C / W
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29

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