2SK4017 Datasheet PDF - Toshiba Semiconductor

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2SK4017
Toshiba Semiconductor

Part Number 2SK4017
Description DC-DC Converter and Motor Drive Applications
Page 6 Pages


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2SK4017
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
2SK4017
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drainsource ON-resistance: RDS (ON) = 0.07 Ω (typ.)
z High forward transfer admittance: |Yfs| = 6.0 S (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drainsource voltage
Draingate voltage (RGS = 20 kΩ)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
5
20
20
40.5
5
2
150
55 to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.9 1.1 ± 0.2
0.6 MAX.
2.3 2.3
123
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
HEAT SINK
3. SOURSE
2
1
3
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
6.25 °C / W
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29



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Electrical Characteristics (Ta = 25°C)
2SK4017
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Characteristic
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10mA, VGS = -20V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Min Typ. Max Unit
— — ±10 μA
— — 100 μA
60 — —
V
35 ― ―
V
1.3 — 2.5
V
— 0.09 0.15
Ω
— 0.07 0.10
3.0 6.0
S
— 730 —
— 60 — pF
— 95 —
— 10 —
Switching time
Turnon time
Fall time
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
ton
tf
toff
Qg
Qgs VDD 48 V, VGS = 10 V, ID = 5 A
Qgd
— 20 —
ns
—4—
— 35 —
— 15 —
— 11 — nC
—4—
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / μs
Min Typ. Max Unit
—— 5 A
— — 20 A
— — 1.7 V
— 34 — ns
— 28 — nC
Marking
K4017
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29



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5
10
ID – VDS
4
4
8
6
3.3
3
3
2
VGS = 2.8V
1
Common source
Tc = 25°C
Pulse test
0
0 0.4 0.8 1.2 1.6 2.0
Drain-source voltage VDS (V)
ID – VGS
10 Common source
VDS = 10 V
Pulse test
8
6
4
100
Ta = −55°C
2
25
0
01 2 34
5
Gate-source voltage VGS (V)
2SK4017
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10
10 4
88
6
ID – VDS
Common source
Tc = 25°C
Pulse test
6
3.3
4
3
2
VGS = 2.8V
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
VDS – VGS
2.0
Common source
Tc = 25
Pulse test
1.6
12
0.8
0.4
1.2
0
0
ID = 5A
2.5
48
12
16
Gate-source voltage VGS (V)
20
100
Common source
VDS = 10 V
Pulse test
|Yfs| – ID
10 Tc = −55°C
100
25
1
0.1
0.1
1 10
Drain current ID (A)
100
RDS (ON) – ID
0.5
Common source
Ta = 25°C
0.4 Pulse test
0.3
0.2
0.1
0
0
VGS = 4V
10
246
8
Drain current ID (A)
10
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RDS (ON) Ta
0.2
Common source
Pulse test
0.15
0.1
VGS = 4 V
ID = 5A
2.5
5
2.5
1.2
1.2
0.05
VGS = 10 V
0
80 40 0 40 80 120 160
Ambient temperature Ta (°C)
2SK4017
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IDR VDS
10
10
5
3
1
1
VGS = 0 V
0.1
0
Common source
Tc = 25°C
Pulse test
0.2
0.4
0.6 0.8
1.0
Drain-source voltage VDS (V)
1.2
10000
1000
Capacitance – VDS
Ciss
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
100
10
0.1
Coss
Crss
1 10
Drain-source voltage VDS (V)
100
Vth Tc
2.6
Common source
VDS = 10 V
ID = 1mA
2.2 Pulse test
1.8
1.4
1
80 40 0 40 80 120 160
Case temperature Tc (°C)
Case temperature Tc (°C)
Dynamic input / output
characteristics
50
VDS
25
40 20
30
20
10
0
0
VGS
15
12V
24V
10
Common source
VDD = 48V
ID = 5 A
Tc = 25°C
Pulse test
5
0
5 10 15 20 25 30
Total gate charge Qg (nC)
4 2009-09-29



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