2SK4016 Datasheet PDF - Toshiba Semiconductor

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2SK4016
Toshiba Semiconductor

Part Number 2SK4016
Description Switching Regulator Applications
Page 6 Pages


2SK4016 datasheet pdf
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2SK4016
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (πMOS VI)
2SK4016
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.)
High forward transfer admittance: |Yfs| = 10 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
13
52
50
1033
13
5.0
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.5 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2005-05-30



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Electrical Characteristics (Ta = 25°C)
2SK4016
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Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6.5 A
VDS = 10 V, ID = 6.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±10
±30
⎯ ⎯ 100
600
2.0 4.0
0.33 0.50
5.0 10
3100
20
270
μA
V
μA
V
V
Ω
S
pF
tr
10 V
ID = 6.5 A VOUT
60
VGS
0V
ton
RL =
110
15 Ω
30Ω
ns
tf 50
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 μs
215
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 13 A
Qgd
62
40 nC
22
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 13 A, VGS = 0 V
IDR = 13 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 13 A
⎯ ⎯ 52 A
⎯ ⎯ −1.7 V
220
ns
0.8 ⎯ μC
Marking
2SK4016
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
2
2005-05-30



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ID – VDS
10
10 6.3
8
8
6
7
6
COMMON SOURCE
Tc = 25°C
PULSE TEST
5.7
4
5.4
2
VGS = 5 V
0
0 2 4 6 8 10
DRAINSOURCE VOLTAGE VDS (V)
ID – VGS
24
COMMON SOURCE
VDS = 10 V
20 PULSE TEST
16
12
8
100
Tc = −55°C
4
25
0
02 4 6
10
GATESOURCE VOLTAGE VGS (V)
2SK4016
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20
10 7
8
16
12
ID – VDS
6.6 COMMON SOURCE
Tc = 25°C
PULSE TEST
6.3
6
8
5.7
4
5.4
VGS = 5 V
0
0 10 20 30 40 50
DRAINSOURCE VOLTAGE VDS (V)
VDS – VGS
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
8
6
4 ID = 13 A
2
6
3
0
0 4 8 12 16 20
GATESOURCE VOLTAGE VGS (V)
|Yfs| – ID
100
COMMON SOURCE
VDS = 10 V
PULSE TEST
Tc = −55°C
10
25
100
1
0.1
0. 1
1 10
DRAIN CURRENT ID (A)
100
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
0.1
0.1
VVGS = 10 V
1 10
DRAIN CURRENT ID (A)
100
3 2005-05-30



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RDS (ON) Tc
2.0
COMMON SOURCE
VDS = 10 V
1.6 PULSE TEST
1.2
0.8
ID = 10 A
6
3
0.4
0
80 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
2SK4016
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IDR VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
5
10
1
0.1
0
3 1 VGS = 0 V
0.4 0.8
1.2
DRAINSOURCE VOLTAGE VDS (V)
1.6
10000
C VDS
Ciss
1000
Coss
100
COMMON SOURCE
VGS = 0 V
f = 1 MHz
10 Tc = 25°C
0.1 1
10
DRAINSOURCE VOLTAGE VDS (V)
Crss
100
Vth Tc
4
COMMON SOURCE
VDS = 10 V
ID = 1 mA
3
2
1
0
80 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
PD Tc
80
60
40
20
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
600
COMMON SOURCE
ID = 13 A
500 Tc = 25°C
PULSE TEST
400 VDS
15
12.5
VDD = 100V
200V 10
400V
300
VGS
7.5
200 5
100 2.5
00
0 20 40 60 80
TOTAL GATE CHARGE Qg (nC)
4 2005-05-30



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