2SK4015 Datasheet PDF - Toshiba Semiconductor

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2SK4015
Toshiba Semiconductor

Part Number 2SK4015
Description Switching Regulator Applications
Page 6 Pages


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2SK4015
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (πMOS VI)
2SK4015
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.60 (typ.)
High forward transfer admittance: |Yfs| = 7.4 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
10
40
45
363
10
4.5
150
-55 to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2009-09-29



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Electrical Characteristics (Ta = 25°C)
2SK4015
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Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯ ⎯ ±10
V (BR) GSS IG = ±10 μA, VDS = 0 V
±30
IDSS
VDS = 600 V, VGS = 0 V
⎯ ⎯ 100
V (BR) DSS ID = 10 mA, VGS = 0 V
600
Vth VDS = 10 V, ID = 1 mA
2.0 4.0
RDS (ON) VGS = 10 V, ID = 5 A
0.60 0.86
Yfs
VDS = 10 V, ID = 5 A
3.7 7.4
Ciss 1500
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
15
Coss
180
tr
10 V
VGS
ID = 5 A VOUT
22
0V
ton
50 Ω
RL =
50
40 Ω
tf 36
VDD ∼− 200 V
toff Duty 1%, tw = 10 μs
180
μA
V
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 10 A
Qgd
42
23 nC
19
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 10 A
⎯ ⎯ 40 A
⎯ ⎯ −1.7 V
170
ns
0.6 ⎯ μC
Marking
K4015
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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ID – VDS
10
COMMON SOURCE
10
Tc = 25°C
PULSE TEST
8
8
7
6.3
6
6
5.7
4
5.4
2
VGS = 5 V
0
0 2 4 6 8 10
DRAINSOURCE VOLTAGE VDS (V)
2SK4015
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ID – VDS
20
10
COMMON SOURCE
7 Tc = 25°C
8 PULSE TEST
16 6.8
6.6
12
6.3
86
5.7
4
5.4
VGS = 5 V
0
0 10 20 30 40 50
DRAINSOURCE VOLTAGE VDS (V)
ID – VGS
16
COMMON SOURCE
VDS = 10 V
PULSE TEST
Tc = −55°C
12
25
8 100
4
0
0 2 4 6 8 10
GATESOURCE VOLTAGE VGS (V)
VDS – VGS
10
COMMON SOURCE
Tc = 25
PULSE TEST
8
6 ID = 10 A
4
5
2
2
0
0 4 8 12 16 20
GATESOURCE VOLTAGE VGS (V)
|Yfs| – ID
100
COMMON SOURCE
VDS = 10 V
PULSE TEST
10
Tc = −55°C
25
100
1
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V
0.1
0. 1
1 10
DRAIN CURRENT ID (A)
100
0.1
0.1
1 10
DRAIN CURRENT ID (A)
100
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RDS (ON) Tc
2.0
COMMON SOURCE
VGS = 10 V
1.6 PULSE TEST
ID = 10 A
1.2
2
5
0.8
0.4
0
80 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
2SK4015
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IDR VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
5 10
1
0.1
0
3 1 VGS = 0 V
0.4 0.8
1.2
DRAINSOURCE VOLTAGE VDS (V)
1.6
10000
C VDS
1000
Ciss
100
Coss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
DRAINSOURCE VOLTAGE VDS (V)
100
Vth Tc
5
COMMON SOURCE
VDS = 10 V
ID = 1 mA
4
3
2
1
0
80 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
PD Tc
50
40
30
20
10
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
600
COMMON SOURCE
ID = 10 A
500 Tc = 25°C
PULSE TEST
400 VDS VDD = 100 V
200 V
400 V
300
VGS
200
100
0
0 20 40 60
TOTAL GATE CHARGE Qg (nC)
15
12.5
10
7.5
5
2.5
0
80
4 2009-09-29



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