2SK4014 Datasheet PDF - Toshiba Semiconductor

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2SK4014
Toshiba Semiconductor

Part Number 2SK4014
Description Relay Drive and Motor Drive Applications
Page 6 Pages


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2SK4014
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK4014
DC/DC Converter, Relay Drive and Motor Drive
Applications
z Low drain-source ON-resistance
: RDS (ON) = 1.6 (typ.)
z High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
z Low leakage current
: IDSS = 100 µA (max) (VDS = 720 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
6
18
45
972
6
15
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
2.78 °C / W
62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 49.5 mH, RG = 25 , IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
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Electrical Characteristics (Ta = 25°C)
2SK4014
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Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
tr
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3 A
VDS = 10 V, ID = 3 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
ID = 3 A
Min Typ. Max Unit
— — ±10
±30 —
— — 100
900 —
2.0 — 4.0
— 1.6 2.0
— 5.0 —
— 1400 —
— 30 —
— 130 —
μA
V
μA
V
V
Ω
S
pF
— 25 —
Switching time
Turnon time
Fall time
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
ton
50 Ω
RL = 133
75
ns
tf — 60 —
VDD = 400 V
toff — 220 —
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 6 A
Qgd
— 45 —
— 25 — nC
— 20 —
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 6 A, VGS = 0 V
IDR = 6 A, VGS = 0 V
dIDR / dt = 100 A / μs
Min Typ. Max Unit
—— 6 A
— — 18 A
— — 1.7 V
— 1100 —
ns
— 10 — μC
Marking
K4014
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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5
Common source
Tc = 25°C
Pulse test
4
ID – VDS
10
8
3
6
5.25
5
2 4.75
4.5
1
VGS = 4 V
0
0 2 4 6 8 10
DRAINSOURCE VOLTAGE VDS (V)
2SK4014
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ID – VDS
10
10 Common source
8 6 Tc = 25°C
Pulse test
8 5.75
6 5.5
4 5.25
5
2
4.5
0 VGS = 4 V
0 10 20 30 40 50
DRAINSOURCE VOLTAGE VDS (V)
16
Common source
VDS = 10 V
Pulse test
12
ID – VGS
8
25
4 100 Tc = −55°C
0
0 2 4 6 8 10
GATESOURCE VOLTAGE VGS (V)
VDS – VGS
20
Common source
Tc = 25°C
Pulse test
16
12
ID = 6 A
8
3
4
1.5
0
0 4 8 12 16 20
GATESOURCE VOLTAGE VGS (V)
100
Common source
VDS = 10 V
Pulse test
Yfs⎪ − ID
10
Tc = −55°C
25
1
100
RDS (ON) ID
10
Common source
Tc = 25°C
Pulse test
VGS = 10 V
1
0.1
0.1
1
DRAIN CURRENT ID (A)
10
0.1
0.1
1
DRAIN CURRENT ID (A)
10
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RDS (ON) Tc
5
Common source
VGS = 10 V
Pulse test
4
ID = 6 A
33
2 1.5
1
0
80 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
2SK4014
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IDR VDS
100
Common source
Tc = 25°C
Pulse test
10
1
10
0.1
0
5 31
0.4
VGS = 0 V
0.8
1.2
1.6
DRAINSOURCE VOLTAGE VDS (V)
10000
1000
C VDS
Ciss
Coss
100
Crss
10 Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1 1
10
DRAINSOURCE VOLTAGE VDS (V)
100
Vth Tc
5 Common source
VDS = 10 V
ID = 1 mA
4 Pulse test
3
2
1
0
80 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
PD Tc
50
40
30
20
10
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
450
VDS
300
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
Common source
ID = 6 A
Tc = 25°C
Pulse test
15
200
100 VDS = 400 V
10
150 VGS
5
00
0 20 40 60 80 100
TOTAL GATE CHARGE Qg (nC)
4 2009-09-29



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