2SK4013 Datasheet PDF - Toshiba Semiconductor

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2SK4013
Toshiba Semiconductor

Part Number 2SK4013
Description Switching Regulator Applications
Page 6 Pages


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2SK4013
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
2SK4013
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)
Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
800
800
±30
6
18
45
317
6
4.5
150
55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 14.5 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
1 2009-09-29



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Electrical Characteristics (Ta = 25°C)
2SK4013
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Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 640 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3 A
VDS = 20 V, ID = 3 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ ±10
±30
⎯ ⎯ 100
800
2.0 4.0
1.35 1.7
2.5 5.0
1400
30
130
μA
V
μA
V
V
Ω
S
pF
tr VG1S0 V
0V
ton
ID = 3 A VOUT
25
80
RL= 133 Ω
ns
tf VDD ∼− 400 V 65
Duty 1%, tw = 10 μs
toff 220
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 6 A
Qgd
45
25 nC
20
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 6 A, VGS = 0 V
IDR = 6 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯⎯ 6 A
⎯ ⎯ 18 A
⎯ ⎯ −1.7 V
1100
ns
10 ⎯ μC
Marking
K4013
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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2SK4013
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ID VDS
5
CComOmMoMnOsNouSrOceURCE
TPTPucclUs=eLS2t2eE55s°°TCtCEST
8,10
4
3
2
6
5.5
5.5
5.25
5.25
5
5
1
VGS=4.5V
0
024 68
DRAINSOURCE VOLTAGE VDS (V)
10
10
Common 8,10
source
8 Ta=25℃
Pulse
test
6
ID VDS
6
5.75
5.5
4 5.25
5
2
VGS=4.5V
0
0 10 20 30 40
DRAINSOURCE VOLTAGE VDS (V)
50
16
Common source
VDS=20V
Pulse test
12
ID VGS
8
TTac==110000°C
4
-55
25
0
0 24 68
GATESOURCE VOLTAGE VGS (V)
10
VDS VGS
10
COMMON SOURCE
Tc C= o2mmCon source
PULSETTaE=S2T5℃
8 Pulse test
6
6
4
3
2
ID = 1.5 A
0
0
4
8 12 16
GATESOURCE VOLTAGE VGS (V)
20
Yfs⎪ − ID
100
Common source
VDS=20V
Pulse test
10
25
-55
TTca==11000℃°C
1
0.1
0.1
1 10
DRAIN CURRENT ID (A)
10.00
RDS (ON) ID
Common source
VGS=10V
Tc=25℃
Pulse test
1.00
0.10
100 0.01 0.1 1
DRAIN CURRENT ID (A)
10
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RDS (ON) Tc
5
Common source
VGS=10V
4 Pulse test
3 67
2
ID=1.5A
1
3
0
-80
-40 0
40 80 120
CASE TEMPERATURE Tc (°C)
160
2SK4013
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IDR VDS
10
Common source
Tc=25℃
Pulse test
1
0.1
0
3
10
VGS=0、-1V
1
-0.2 -0.4 -0.6 -0.8
-1
DRAINSOURCE VOLTAGE VDS (V)
-1.2
10000
C – VDS
1000
Ciss
Coss
100
Common source
Crss
VGS=0V
f=1MHz
Tc=25℃
10
0.1 1 10
DRAINSOURCE VOLTAGE VDS (V)
100
5 Vth Tc
4
3
2
1
0
-80
Common source
VDS=10V
ID=1mA
Pulse test
-40 0
40 80
CASE TEMPERATURE Tc (°C)
120
160
PD - Tc
60
40
20
0
0 40 80 120 160
CASE TEMPERATURE Tc ()
450
VDS
300
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
Common source
ID = 6 A
Tc = 25°C
Pulse test
15
200
100 VDS = 400 V
10
150 VGS
5
00
0 20 40 60 80 100
TOTAL GATE CHARGE Qg (nC)
4 2009-09-29



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