2SK3995 Datasheet PDF - Panasonic

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2SK3995
Panasonic

Part Number 2SK3995
Description Silicon N-channel enhancement MOSFET
Page 4 Pages


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Power MOSFETs
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK3995
Silicon N-channel enhancement MOSFET
For high speed switching circuits
For PDP
Features
Medium breakdown voltag: VDSS = 200 V, ID = 30 A
Low ON resistance, optimum for PDP panel drive
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
Gate-source surrender voltage
VDSS
VGSS
Drain current
Peak drain current *1
Drain reverse current
Peak drain reverse current *1
Avalanche energy capability *2
ID
IDP
IDR
IDRP
EAS
Drain power dissipation
TC = 25°C
Ta = 25°C *3
PD
Junction temperature
Tj
Storage temperature
Tstg
Note) *1: PW 10 ms, Duty 1.0%
*2: Avalanche energy capability guaranteed
*3: Without heat sink
Rating
200
±30
30
120
30
120
801
50
1.4
150
-55 to +150
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
Package
Code
TO-220C-G1
Marking Symbol: K3995
Pin Name
1. Gate
2. Drain
3. Source
Internal Connection
D
G
S
Electrical Characteristics TC = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
VDSS
IDSS
IGSS
ID = 1 mA, VGS = 0
VDS = 160 V, VGS = 0
VGS = ±30 V, VDS = 0
200
10
±1.0
Gate threshold voltage
Vth VDS = 10 V, ID = 1.0 mA
2.5 4.5
Drain-source ON resistance
Forward transfer conductance
Short-circuitinputcapacitance(Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
RDS(on)
Yfs
Ciss
Coss
Crss
VGS = 10 V, ID = 15.0 A
VDS = 10 V, ID = 15.0 A
VDS = 25 V, VGS = 0, f = 1 MHz
43 52
12 22
1 970
400
85
Turn-on delay time
td(on)
32
Rise time
Turn-off delay time
tr
td(off)
VDD = 100 V, ID = 15.0 A
RL = 6.7 W, VGS = 10 V
130
170
Fall time
tf
88
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
mA
mA
V
mW
S
pF
pF
pF
ns
ns
ns
ns
Publication date: May 2007
SJG00044AED
1

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