2SK3405 Datasheet PDF - NEC

www.Datasheet-PDF.com

2SK3405
NEC

Part Number 2SK3405
Description SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
Page 8 Pages


2SK3405 datasheet pdf
Download PDF
2SK3405 pdf
View PDF for Mobile

No Preview Available !

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3405
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3405 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5-V drive available
Low on-state resistance
RDS(on)1 = 9.0 mMAX. (VGS = 10 V, ID = 24 A)
Low gate charge
QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3405
TO-220AB
2SK3405-ZK
2SK3405-ZJ
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C )
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
20
±20
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
www.DataTSohteael tP4Uow.ceomr Dissipation (TA = 25°C)
ID(DC)
ID(pulse)
PT1
±48
±192
1.5
Total Power Dissipation (TC = 25°C) PT2
50
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to +150
Note PW 10 µs, Duty Cycle 1%
V
V
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14639EJ2V0DS00 (2nd edition) The mark # shows major revised points.
Date Published April 2001 NS CP(K)
Printed in Japan
©
1999, 2000



No Preview Available !

ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Leakage Current
Gate Leakage Current
IDSS VDS = 20 V, VGS = 0 V
IGSS VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 24 A
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 24 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)2
Ciss
Coss
Crss
VGS = 4.5 V, ID = 24 A
VDS = 10 V
VGS = 0 V
f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
td(on)
tr
td(off)
VDD = 10 V , ID = 24 A
VGS(on) = 10 V
RG = 10
Fall Time
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDD = 16 V
VGS = 10 V
ID = 48 A
Diode Forward Voltage
VF(S-D)
IF = 48 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 48 A, VGS = 0 V
Qrr di/dt = 100 A/µs
2SK3405
MIN.
1.5
12.5
TYP.
6.5
9.9
1800
770
400
21
13
64
25
34
6.6
11
1.0
38
29
MAX.
10
±10
2.5
9.0
14.0
UNIT
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
www.DataSheet4U.com
VGS
0
τ
τ = 1µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VDS
VDS
Wave Form
0
td(on)
90 %
90 %
10 %
tr td(off) tf
ton toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14639EJ2V0DS



No Preview Available !

TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
VGS =10 V
7.0 V
150
4.5 V
100
50
Pulsed
0
012 3
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = 10 V
ID = 1 mA
2.5
2.0
1.5
1.0
0.5
0
50 0 50 100 150
Tch - Channel Temperature - ˚C
www.DataSheet4U.cDoRmAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
15 ID = 48 A
24 A
10 A
10
5
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
2SK3405
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
VDS = 10 V
100
10
Tch = 50˚C
25˚C
25˚C
1 75˚C
150˚C
0.1
1
2 3 45
VGS - Gate to Source Voltage - V
6
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS = 10 V
Pulsed
10
Tch = 150˚C
75˚C
25˚C
1 25˚C
50˚C
0.1
0.01
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
20
10 VGS = 10 V
7.0 V
4.5 V
0
0.1 1
10 100 1000
ID - Drain Current - A
Data Sheet D14639EJ2V0DS
3



No Preview Available !

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
16
14
VGS = 4.5 V
12
10 7.0 V
8 10 V
6
4
2
0
50 0
50 100
Tch - Channel Temperature - ˚C
150
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
www.DataSheet4U.com
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1 10 100
ISD - Diode Forward Current - A
2SK3405
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
VGS = 10 V
100
4.5 V 0 V
10
1
0.1
0.010
0.5 1
VSD - Source to Drain Voltage - V
1.5
1000
SWITCHING CHARACTERISTICS
100
10
td(on)
tf
td(off)
tr
VDD = 10 V
VGS = 10 V
1 RG = 10
0.1 1
10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
18 12
ID = 48 A
15
VDD = 16 V
10 V
12 4 V
8
9
VGS
64
3
VDS
00
0 10 20 30 40
QG - Gate Charge - nC
4 Data Sheet D14639EJ2V0DS



2SK3405 datasheet pdf
Download PDF
2SK3405 pdf
View PDF for Mobile


Related : Start with 2SK340 Part Numbers by
2SK3402 SWITCHING N-CHANNEL POWER MOSFET 2SK3402
NEC
2SK3402 pdf
2SK3402 MOS Field Effect Transistor 2SK3402
Guangdong Kexin Industrial
2SK3402 pdf
2SK3403 Field Effect Transistor Silicon N Channel MOS Type 2SK3403
Toshiba Semiconductor
2SK3403 pdf
2SK3404 SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE 2SK3404
NEC
2SK3404 pdf
2SK3404 MOS Field Effect Transistor 2SK3404
Guangdong Kexin Industrial
2SK3404 pdf
2SK3405 SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE 2SK3405
NEC
2SK3405 pdf
2SK3405 MOS Field Effect Transistor 2SK3405
Guangdong Kexin Industrial
2SK3405 pdf
2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3407
Toshiba Semiconductor
2SK3407 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact