2SK3405 Datasheet PDF - Guangdong Kexin Industrial

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2SK3405
Guangdong Kexin Industrial

Part Number 2SK3405
Description MOS Field Effect Transistor
Page 1 Pages


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SMD Type
MOS Field Effect Transistor
2SK3405
MOSFET
Features
4.5-V drive available
Low on-state resistance
RDS(on)1 = 9.0m MAX. (VGS = 10 V, ID = 24 A)
Low gate charge
QG = 34 nC TYP. (ID = 48 A, VDD = 16V, VGS = 10 V)
Built-in gate protection diode
Surface mount device available
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Rating
20
20
48
192
50
1.5
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
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Parameter
Symbol
Drain cut-off current
IDSS
Gate leakage current
IGSS
Gat cutoff voltage
VGS(off)
Forward transfer admittance
Yfs
Drain to source on-state resistance
RDS(on)1
RDS(on)2
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
ton
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Testconditons
Min Typ Max
VDS=20V,VGS=0
10
VGS= 20V,VDS=0
10
VDS=10V,ID=1mA
1.5 2.5
VDS=10V,ID=24A
12.5
VGS=10V,ID=24A
6.5 9.0
VGS=4.5V,ID=24A
9.9 14.0
1800
VDS=10V,VGS=0,f=1MHZ
770
400
21
ID=24A,VGS(on)=10V,RG=10 ,VDD=10V
13
64
25
34
ID =48A, VDD = 16 V, VGS = 10 V
6.6
11
Unit
A
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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