2SK1762 Datasheet PDF - Renesas Technology

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2SK1762
Renesas Technology

Part Number 2SK1762
Description Silicon N Channel MOS FET
Page 7 Pages


2SK1762 datasheet pdf
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2SK1762
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter
Outline
REJ03G0969-0200
(Previous: ADE-208-1316)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
12 3
S
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Rev.2.00 Sep 07, 2005 page 1 of 6



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2SK1762
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
250
±30
12
48
12
35
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
www.DaBtaoSdhyeetot4dUr.acionmdiode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
250
±30
—
—
2.0
—
5.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.23
8.0
1100
440
68
20
65
100
44
1.0
200
Max
—
—
±10
250
3.0
0.35
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 6 A, VGS = 10 V*3
S ID = 6 A, VDS = 10 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 6 A, VGS = 10 V,
ns RL = 5 Ω
ns
ns
V IF = 12 A, VGS = 0
ns IF = 12 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6



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2SK1762
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V 6 V
Pulse Test
16 5.5 V
12
5V
8
4.5 V
4
VGS = 4 V
0 4 8 12 16 20
www.DataSheet4U.com Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
10 A
2
5A
1
ID = 2 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1
0.3
OispliemraitetiodnbDiynCRtOPhDpWiSesr(=aoatn1iro)0enam(Ts1c(m1=s1s20h50o°Ctµ))s
0.1 Ta = 25°C
0.05
1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
8
VDS = 10 V
Pulse Test
6
Tc = 75°C
4 25°C
– 25°C
2
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5 VGS = 10 V
0.2
15 V
0.1
0.05
0.5
12
5 10 20
Drain Current ID (A)
50



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2SK1762
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.8 Pulse Test
VGS = 10 V
0.6
0.4
0.2
ID = 10 A
5A
2A
0
– 40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
500
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
5
0.2 0.5 1 2
5 10 20
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Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500 20
ID = 12 A
400
16
300
VDS
200
VGS
12
VDD = 200 V
100 V
50 V
8
100
0
0
VDD = 200 V
100 V
50 V
8 16 24 32
Gate Charge Qg (nc)
4
0
40
Forward Transfer Admittance
vs. Drain Current
50
VDS = 10 V
Pulse Test
20
Tc = –25°C
10
5
75°C
25°C
2
1
0.5
0.1 0.2
0.5 1
2
5
Drain Current ID (A)
10
10000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1000
Ciss
Coss
100
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500 VGS = 10 V, VDD =.. 30 V
PW = 2 µs, duty ≤ 1 %
200
td (off)
100
50 tf
tr
20
td (on)
10
5
0.1 0.2 0.5 1 2
5
Drain Current ID (A)
10
Rev.2.00 Sep 07, 2005 page 4 of 6



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