2SK1401A Datasheet PDF - Inchange Semiconductor

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2SK1401A
Inchange Semiconductor

Part Number 2SK1401A
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1401A
DESCRIPTION
·Drain Current ID= 15A@ TC=25
·Drain Source Voltage-
: VDSS= 350V(Min)
·Fast Switching Speed
APPLICATIONS
·high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
350
±30
Drain Current-continuous@ TC=25
15
Total Dissipation@TC=25
100
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
0.83 /W
Thermal Resistance,Junction to Ambient 35 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1401A
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=8A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=280V; VGS= 0
VSD Diode Forward Voltage
IF=15A; VGS=0
MIN TYP MAX UNIT
350 V
2.0 3.0 V
0.30 0.40
Ω
±10 uA
250 uA
1.05 V
tr Rise time
80 ns
ton Turn-on time
tf Fall time
toff Turn-off time
95 ns
VGS=10V;ID=8A;RL=3.75Ω
55 ns
155 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn



2SK1401A datasheet pdf
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