2SK1401A Datasheet PDF - Hitachi Semiconductor

www.Datasheet-PDF.com

2SK1401A
Hitachi Semiconductor

Part Number 2SK1401A
Description Silicon N-Channel MOS FET
Page 9 Pages


2SK1401A datasheet pdf
View PDF for PC
2SK1401A pdf
View PDF for Mobile


No Preview Available !

2SK1401, 2SK1401A
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source



No Preview Available !

2SK1401, 2SK1401A
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1401
2SK1401A
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
300
350
±30
15
60
15
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2



No Preview Available !

2SK1401, 2SK1401A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
K1401 V(BR)DSS
K1401A
300
350
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage K1401 IDSS
drain current
K1401A
Gate to source cutoff voltage VGS(off)
Static drain to source K1401 RDS(on)
on state resistance K1401A
2.0
Forward transfer admittance |yfs|
6
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max
——
——
——
±10
— 250
0.25
0.30
9.5
1250
420
70
15
80
100
55
1.05
3.0
0.35
0.40
370 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 240 V, VGS = 0
VDS = 280 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 V *1
ID = 8 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 8 A, VGS = 10 V,
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0,
diF/dt = 100 A/µs
3



No Preview Available !

2SK1401, 2SK1401A
Power vs. Temperature Derating
120
80
40
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V
8V
6 V 5.5 V
16
Pulse Test
12
5V
8
4.5 V
4
VGS = 4 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
100
30
10
3
1.0
OpiserlaimtioitnedinbtyhiRs
area
DS (on)
DC
PW
Ope=ra1ti0onms(T(1
C
1 ms
=Sh2o5t°PCu)lse)
0.3 2SK1401
Ta = 25°C 2SK1401A
0.1
1 3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 20 V
Pulse Test
16
12
8
TC = 75°C
4
25°C
–25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
4



2SK1401A datasheet pdf
Download PDF
2SK1401A pdf
View PDF for Mobile


Related : Start with 2SK1401 Part Numbers by
2SK1401 Silicon N-Channel MOS FET 2SK1401
Hitachi Semiconductor
2SK1401 pdf
2SK1401A Silicon N-Channel MOS FET 2SK1401A
Hitachi Semiconductor
2SK1401A pdf
2SK1401A N-Channel MOSFET Transistor 2SK1401A
Inchange Semiconductor
2SK1401A pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact