2SK1386 Datasheet PDF - Inchange Semiconductor

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2SK1386
Inchange Semiconductor

Part Number 2SK1386
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1386
DESCRIPTION
·Drain Current ID= 7A@ TC=25
·Drain Source Voltage-
: VDSS=450 (Min)
·Fast Switching Speed
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI
T
450 V
±20
V
7A
100 W
150
-55~150
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1386
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 0V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0
VSD Diode Forward Voltage
IF=7A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=6A;RL=25Ω
toff Turn-off time
MIN TYP MAX UNIT
450 V
2.5 3.5 5.0
V
0.98 1.3
Ω
±100 nA
500 uA
1.1 1.65
V
50 80 ns
70 110
50 80
130 200
ns
ns
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn



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