2SK1384 Datasheet PDF - Inchange Semiconductor

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2SK1384
Inchange Semiconductor

Part Number 2SK1384
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1384
DESCRIPTION
·Drain Current ID=5A@ TC=25
·Drain Source Voltage-
: VDSS=800V(Min)
APPLICATIONS
·high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
800
±20
V
V
Drain Current-continuous@ TC=255 A
Total Dissipation@TC=25
80 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.56
30
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1384
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-stage Resistance
IGSS Gate Source Leakage Current
VDS= VGS; ID=1mA
VGS=10V; ID=2.5A
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
ton Turn-on time
toff Turn-off time
VGS=10V;ID=2.5A;
RL=50Ω
VSD Diode Forward Voltage
IF=5A; VGS=0
MIN TYP. MAX UNIT
800 V
2.1 3.0 4.0
V
1.5 2.0
Ω
±100 nA
500 uA
30 50 ns
420 630
ns
1.0 1.5
V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn



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