2SK1346 Datasheet PDF - Inchange Semiconductor

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2SK1346
Inchange Semiconductor

Part Number 2SK1346
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1346
DESCRIPTION
·Drain Current ID=25A@ TC=25
·Drain Source Voltage-
: VDSS= 60V(Min)
·Fast Switching Speed
APPLICATIONS
·High speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
60
±20
Drain Current-continuous@ TC=25
25
Total Dissipation@TC=25
40
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
V
V
A
W
isc websitewww.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1346
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0
VSD Diode Forward Voltage
IF=25A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=15A;RL=2Ω
toff Turn-off time
MIN TYP MAX UNIT
60 V
1.5 3.5 V
0.04 0.06
Ω
±100 nA
300 uA
1.7 V
80 160 ns
100 200
ns
85 170 ns
165 330
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn



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