2SK1339 Datasheet PDF - Inchange Semiconductor

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2SK1339
Inchange Semiconductor

Part Number 2SK1339
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1339
DESCRIPTION
·Drain Current ID= 3A@ TC=25
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
900
±20
Drain Current-continuous@ TC=25
3
Total Dissipation@TC=25
80
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
0.83 /W
Thermal Resistance,Junction to Ambient 35 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1339
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0
VSD Diode Forward Voltage
IF=3A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=2A;RL=15Ω
toff Turn-off time
MIN TYP MAX UNIT
900 V
2.0 3.0 V
5.0 7.0
Ω
±10 uA
250 uA
0.9 V
40 ns
50 ns
55 ns
105 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn



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