2SK1331 Datasheet PDF - Inchange Semiconductor

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2SK1331
Inchange Semiconductor

Part Number 2SK1331
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1331
DESCRIPTION
·Drain Current ID=15A@ TC=25
·Drain Source Voltage-
: VDSS=500V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
DSS Drain-Source Voltage (VGS=0)
500 V
VGS Gate-Source Voltage
±20
V
ID Drain Current-continuous@ TC=2515 A
Ptot Total Dissipation@TC=25
100 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
35
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1331
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=8A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0
ton Turn-on time
toff Turn-off time
VGS=10V;ID=8A;
RL=19Ω
MIN TYP MAX UNIT
500 V
1.0 5.0 V
0.38 0.50
±1
Ω
uA
0.1 m A
110 ns
430 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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