2SK1304 Datasheet PDF - Renesas


www.Datasheet-PDF.com

2SK1304
Renesas

Part Number 2SK1304
Description Silicon N Channel MOS FET
Page 7 Pages

2SK1304 datasheet pdf
View PDF for PC
2SK1304 pdf
View PDF for Mobile


No Preview Available !

2SK1304
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1
2
3
S
REJ03G0923-0200
(Previous: ADE-208-1262)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain
(Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

2SK1304
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
100
±20
40
160
40
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Symbol
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
td(on)
tr
td(off)
tf
VDF
trr
Note: 3. Pulse test
Min
100
±20
1.0
22
Typ
0.025
0.03
35
3500
1400
340
25
170
730
300
1.2
300
Max
±10
250
2.0
0.03
0.04
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 20 A, VGS = 10 V *3
ID = 20 A, VGS = 4 V *3
ID = 20 A, VDS = 10 V *3
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 20 A, VGS = 10 V,
RL = 1.5
IF = 40 A, VGS = 0
IF = 40 A, VGS = 0,
diF/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

2SK1304
Main Characteristics
Power vs. Temperature Derating
120
80
40
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
100
10 V
80
5V
7V
Pulse Test
4V
60
3.5 V
40
3V
20
VGS = 2.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
50 A
1.2
0.8
20 A
0.4 ID = 10 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
Operation in this Area
200
is Limited by RDS (on)
100
50
20
10
5
2
TDaC=OPp2eW5ra°=tCio1n0(mT1Csm=(11s02S05h°1µCo0st))µs
1.0
0.5
1
3
10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
75°C
10 TC = 25°C
–25°C
0 12345
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
0.02
VGS = 4 V
10 V
0.01
0.005
2
5 10 20
50 100 200
Drain Current ID (A)
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

2SK1304
Static Drain to Source on State
Resistance vs. Temperature
0.10
Pulse Test
0.08
0.06
ID = 50 A
20 A
10 A
0.04
0.02
VGS = 4 V
VGS = 10 V
50 A
20 A
10 A
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
200
VGS = 0
Pulse Test
100
50
20
10
5
0.5 1.0 2
5 10 20 50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100 20
80 VDS
60
VDD = 25 V
50 V
80 V
16
12
VDD = 80 V
40
50 V
25 V
20
VGS
8
4
ID = 40 A
0
0 40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
–25°C
10 TC = 25°C
75°C
5
2
VGS = 10 V
Pulse Test
1.0
0.5 1.0 2
5 10 20 50
Drain Current ID (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
Crss
100
VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1,000
500
200
Switching Characteristics
td (off)
tf
100
50
20
10
0.5
tr
td (on)
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
1.0 2
5 10 20 50
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
Free Datasheet http://www.datasheet4u.com/




2SK1304 datasheet pdf
Download PDF
2SK1304 pdf
View PDF for Mobile


Similiar Datasheets : 2SK1300 2SK1300 2SK1301 2SK1302 2SK1303 2SK1304 2SK1304 2SK1305 2SK1305 2SK1306 2SK1307 2SK1310 2SK1310A 2SK1313 2SK1313L 2SK1313S 2SK1314 2SK1314L 2SK1314S 2SK1315 2SK1315L 2SK1315S 2SK1316 2SK1316L 2SK1316S 2SK1317 2SK1318 2SK1319 2SK1320 2SK1321

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact