2SK1280 Datasheet PDF - Inchange Semiconductor

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2SK1280
Inchange Semiconductor

Part Number 2SK1280
Description N-Channel MOSFET Transistor
Page 2 Pages

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1280
DESCRIPTION
·Drain Current ID= 18A@ TC=25
·Drain Source Voltage-
: VDSS=500V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI
T
500 V
±20
V
18 A
150 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c Thermal Resistance,Junction to Case
0.83 /W
th j-a Thermal Resistance,Junction to Ambient 35.0 /W
isc websitewww.iscsemi.cn
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