2SK1276A Datasheet PDF - Fuji Electric

www.Datasheet-PDF.com

2SK1276A
Fuji Electric

Part Number 2SK1276A
Description N-channel MOS-FET
Page 2 Pages


2SK1276A datasheet pdf
View PDF for PC
2SK1276A pdf
View PDF for Mobile


No Preview Available !

2SK1276A
F-V Series
> Features
- Include Fast Recovery Diode
- High Voltage
- Low Driving Power
N-channel MOS-FET
250V 0,25Ω 20A 100W
> Outline Drawing
> Applications
- Motor Control
- Inverters
- Choppers
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Drain-Gate-Voltage (RGS=20K)
Continous Drain Current
V DS
V DGR
ID
250
250
20
Pulsed Drain Current
I D(puls)
80
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
P D 100
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=250V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±20V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=10A
VGS=10V
Forward Transconductance
g fs
ID=10A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=150V
t r ID=20A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=25
Avalanche Capability
I AV L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
250
2,1
6
15
Typ. Max.
3,0
10
0,5
10
0,16
12
1100
240
130
30
50
200
100
4,0
500
2,0
100
0,25
1600
360
200
45
80
300
150
20
80
0,95 1,8
100 150
0,35
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
35 °C/W
1,25 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com



No Preview Available !

N-channel MOS-FET
250V 0,25Ω 20A 100W
> Characteristics
Typical Output Characteristics
2SK1276A
F-V Series
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
1
2
3
VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
Tch [°C]
Typical Forward Transconductance vs. ID
VGS [V]
Gate Threshold Voltage vs. Tch
44
5
6
ID [A]
Typical Capacitance vs. VDS
ID [A]
Typical Input Charge
Tch [°C]
Forward Characteristics of Reverse Diode
7
8
↑↑
9
VDS [V]
Allowable Power Dissipation vs. TC
10
Qg [nC]
Safe operation area
12
VSD [V]
Transient Thermal impedance
11
Tc [°C]
VDS [V]
This specification is subject to change without notice!
t [s]



2SK1276A datasheet pdf
Download PDF
2SK1276A pdf
View PDF for Mobile


Related : Start with 2SK1276 Part Numbers by
2SK1276A N-channel MOS-FET 2SK1276A
Fuji Electric
2SK1276A pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact