2SK1213 Datasheet PDF - Inchange Semiconductor

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2SK1213
Inchange Semiconductor

Part Number 2SK1213
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1213
DESCRIPTION
·Drain Current ID=6A@ TC=25
·Drain Source Voltage-
: VDSS=600V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
600
±20
V
V
Drain Current-continuous@ TC=256 A
Total Dissipation@TC=25
125 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 /W
Rth j-a Thermal Resistance,Junction to Ambient 50 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1213
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=600V; VGS= 0
VSD Forward On-Voltage
IS=6A; VGS=0
tr Rise time
ton Turn-on time
tf Fall time
VGS=10V;ID=3A;
RL=100Ω
toff Turn-off time
MIN TYP. MAX UNIT
600 V
1.5 3.5 V
0.95 1.25
Ω
±100 nA
300 uA
2.0 V
25 50 ns
40 80 ns
20 40 ns
85 170 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn



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