2SK1211 Datasheet PDF - Inchange Semiconductor

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2SK1211
Inchange Semiconductor

Part Number 2SK1211
Description N-Channel MOSFET Transistor
Page 2 Pages


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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1211
DESCRIPTION
·Drain Current ID=2.5A@ TC=25
·Drain Source Voltage-
: VDSS=800V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
800
±20
V
V
Drain Current-continuous@ TC=252.5 A
Total Dissipation@TC=25
40 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.56
35
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1211
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
MIN TYP. MAX UNIT
800 V
2.5 3.5 5.0 V
7.0 Ω
±100 nA
500 uA
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn



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