2SJ667 Datasheet PDF - Sanyo Semicon Device

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2SJ667
Sanyo Semicon Device

Part Number 2SJ667
Description General-Purpose Switching Device
Page 4 Pages


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Ordering number : ENN8248
2SJ667
2SJ667
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
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Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=30V, L=50µH, IAV=--42A
*2 L50µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--100
±20
--42
--168
2.5
100
150
--55 to +150
58
--42
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : J667
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--100V, VGS=0
VGS= ±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--21A
ID=--21A, VGS=--10V
ID=--21A, VGS=--4V
min
--100
--1.2
22
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
37 S
42 56 m
52 74 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005QA TS IM TB-00001248 No.8248-1/4



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Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2056A
2SJ667
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--42A
VDS=--50V, VGS=--10V, ID=--42A
VDS=--50V, VGS=--10V, ID=--42A
IS=--42A, VGS=0
15.6 3.2
14.0
4.8
2.0
Ratings
min typ max
Unit
6350
pF
430 pF
250 pF
47 ns
360 ns
480 ns
220 ns
110 nC
20 nC
20 nC
--1.05
--1.2 V
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1.6
2.0
1.0
12
0.6
3
5.45 5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --50V
ID= --21A
RL=2.38
D VOUT
2SJ667
P.G 50S
Avalanche Resistance Test Circuit
0V
--10V
50
RG
50
L
2SJ667
VDD
No.8248-2/4



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2SJ667
--80
Tc=25°C
--70
ID -- VDS
--80
VDS= --10V
--70
ID -- VGS
--60 --60
--50
--4V
--50
--40 --40
--30 --30
--20
--10 VGS= --3V
0
0 --1 --2 --3 --4 --5 --6 --7
Drain-to-Source Voltage, VDS -- V IT08810
RDS(on) -- VGS
120
ID= --21A
100
80
60 Tc=75°C
25°C
40
--25°C
20
0
--2 --3 --4 --5 --6 --7 --8
Gate-to-Source Voltage, VGS -- V
yfs-- ID
100
7 VDS= --10V
5
--9 --10
IT08812
3 25°C
2
10
7
Tc=
--25°C
75°C
5
3
2
1.0
7
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100
Drain Current, ID -- A
IT08814
SW Time -- ID
1000
VDD= --50V
7
td(off)
VGS= --10V
5
3
2 tf
tr
100
7
5 td(on)
3
2
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Drain Current, ID -- A
IT08816
--20
--10
0
0
100
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT08811
90
80
70
60
50
IIDD==----2211AA,,VVGGSS==----41V0V
40
30
20
10
0
--50
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
10000
7
5
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IF -- VSD
IT08813
VGS=0
--0.3
--0.6
--0.9
--1.2
--1.5
Diode Forward Voltage, VSD -- V IT08815
Ciss, Coss, Crss -- VDS
Ciss f=1MHz
3
2
1000
7
5
3
2
100
0
Coss
Crss
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT08817
No.8248-3/4



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2SJ667
--10
VDS= --50V
--9 ID= --42A
--8
VGS -- Qg
--7
--6
--5
--4
--3
--2
--1
0
0 10 20 30 40 50 60 70 80 90 100 110
Total Gate Charge, Qg -- nC
IT08818
PD -- Ta
3.0
ASO
3
2 IDP= --168A
--100
7
5
ID= --42A
3
2
--10
7
5
3 Operation in
<10µs100µ1s0µs
DC oper1a0ti0o1mn0sm1sms
2 this area is
--1.0 limited by RDS(on).
7
5
3
2
Tc=25°C
Single pulse
--0.1
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2
Drain-to-Source Voltage, VDS -- V IT08819
PD -- Tc
120
2.5 100
2.0 80
1.5 60
1.0 40
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08820
20
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT08821
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2005. Specifications and information herein are subject
to change without notice.
PS No.8248-4/4



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