2SJ664 Datasheet PDF - Sanyo Semicon Device

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2SJ664
Sanyo Semicon Device

Part Number 2SJ664
Description General-Purpose Switching Device
Page 4 Pages


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Ordering number : EN8589
2SJ664
2SJ664
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
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Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=30V, L=200µH, IAV=--17A
*2 L200µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--100
±20
--17
--68
1.65
50
150
--55 to +150
38
--17
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : J664
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS= ±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--8A
ID=--8A, VGS=--10V
ID=--8A, VGS=--4V
min
--100
--1.2
9
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
15 S
102 136 m
138 193 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1805QA TS IM TB-00001097 No.8589-1/4



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Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7513-002
10.2
2SJ664
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--17A
VDS=--50V, VGS=--10V, ID=--17A
VDS=--50V, VGS=--10V, ID=--17A
IS=--17A, VGS=0V
min
Package Dimensions
unit : mm
7001-003
4.5
1.3
10.2
Ratings
typ
2090
155
108
17
105
185
98
41
7
9
--0.93
max
--1.2
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
4.5
1.3
1.2
0.8 0.4
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123
2.55 2.55
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --50V
ID= --8A
RL=6.25
D VOUT
2SJ664
P.G 50S
12 3
0.8
1.2
2.55 2.55
2.55 2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Avalanche Resistance Test Circuit
0V
--10V
50
RG
50
L
DUT
VDD
No.8589-2/4



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--35
Tc=25°C
--30
--25
ID -- VDS
--10V--6V
--4V
2SJ664
--35
VDS= --10V
--30
--25
ID -- VGS
--20 --20
--15 --15
--10
VGS= --3V
--5
0
0 --1 --2 --3 --4 --5 --6 --7
Drain-to-Source Voltage, VDS -- V IT08780
RDS(on) -- VGS
300
ID= --8A
260
220
180
140 Tc=75°C
25°C
100
--25°C
60
20
--2 --3 --4 --5 --6 --7 --8
Gate-to-Source Voltage, VGS -- V
yfs-- ID
5
VDS= --10V
3
--9 --10
IT08782
2
25°C
10
7
5
Tc=
--25°C
75°C
3
2
1.0
7
5
--0.1
2 3 5 7 --1.0
2 3 5 7 --10
5
VDD= --50V
3 VGS= --10V
Drain Current, ID -- A
SW Time -- ID
td(off)
2
23 5
IT08784
100 tf
7 tr
5
3
2 td(on)
10
--0.1
23
5 7 --1.0
2 3 5 7 --10
23
Drain Current, ID -- A
IT08786
--10
--5
0
0
200
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT08781
RDS(on) -- Tc
180
160
140
120
I D= --8IAD,=V--G8SA=,--V4VGS= --10V
100
80
60
40
--50
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
5
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IT08783
IS -- VSD
VGS=0V
--0.3
--0.6
--0.9
--1.2
--1.5
Diode Forward Voltage, VSD -- V IT08785
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
1000
7
5
3
2
100
7
5
0
Coss
Crss
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT08787
No.8589-3/4



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2SJ664
--10
VDS= --50V
--9 ID= --17A
--8
VGS -- Qg
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25 30 35
Total Gate Charge, Qg -- nC
PD -- Ta
2.0
40 45
IT08788
ASO
2
--100 IDP= --68A
7
5
3
2
ID= --17A
--10
7
5
3
DC o1p0e0r1ma0tsimons1m1s 01µ00sµs10µs
2 Operation in
--1.0 this area is
7 limited by RDS(on).
5
3
2 Tc=25°C
--0.1 Single pulse
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2
Drain-to-Source Voltage, VDS -- V IT08789
PD -- Tc
60
1.65 50
1.5
40
1.0 30
20
0.5
10
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08735
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT08747
Note on usage : Since the 2SJ664 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2005. Specifications and information herein are subject
to change without notice.
PS No.8589-4/4



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