2SJ661 Datasheet PDF - ON Semiconductor

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2SJ661
ON Semiconductor

Part Number 2SJ661
Description P-Channel Power MOSFET
Page 9 Pages


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Ordering number : EN8586A
2SJ661
P-Channel Power MOSFET
–60V, –38A, 39mΩ, TO-262-3L/TO-263-2L
http://onsemi.com
Features
ON-resistance RDS(on)1=29.5mΩ(typ.)
4V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Package Dimensions unit : mm (typ)
7537-001
Input capacitance Ciss=4360pF (typ.)
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--38
--152
1.65
65
Unit
V
V
A
A
W
W
Continued on next page.
Package Dimensions unit : mm (typ)
7535-001
2SJ661-1E
2SJ661-DL-1E
10.0 4.5
8.0
1.3
10.0 4.5
8.0
1.3
4
5.3
1.47
1.27
0.8 0.5
123
2.54 2.54
1 : Gate
2 : Drain
3 : Source
TO-262-3L
Product & Package Information
• Package : TO-262-3L
• JEITA, JEDEC : TO-262
• Minimum Packing Quantity : 50pcs./magazine
Marking
1 23
2.54
1.27
0.8
2.54
0.254
5.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
• Package : TO-263-2L
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 800pcs./reel
Packing Type : DL
Electrical Connection
2, 4
J661
LOT No.
DL
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/N1805QA MSIM TB-00001078 No.8586-1/9

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