2SJ661 Datasheet PDF - ON Semiconductor

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2SJ661
ON Semiconductor

Part Number 2SJ661
Description P-Channel Power MOSFET
Page 9 Pages


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Ordering number : EN8586A
2SJ661
P-Channel Power MOSFET
–60V, –38A, 39mΩ, TO-262-3L/TO-263-2L
http://onsemi.com
Features
ON-resistance RDS(on)1=29.5mΩ(typ.)
4V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Package Dimensions unit : mm (typ)
7537-001
Input capacitance Ciss=4360pF (typ.)
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--38
--152
1.65
65
Unit
V
V
A
A
W
W
Continued on next page.
Package Dimensions unit : mm (typ)
7535-001
2SJ661-1E
2SJ661-DL-1E
10.0 4.5
8.0
1.3
10.0 4.5
8.0
1.3
4
5.3
1.47
1.27
0.8 0.5
123
2.54 2.54
1 : Gate
2 : Drain
3 : Source
TO-262-3L
Product & Package Information
• Package : TO-262-3L
• JEITA, JEDEC : TO-262
• Minimum Packing Quantity : 50pcs./magazine
Marking
1 23
2.54
1.27
0.8
2.54
0.254
5.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
• Package : TO-263-2L
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 800pcs./reel
Packing Type : DL
Electrical Connection
2, 4
J661
LOT No.
DL
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/N1805QA MSIM TB-00001078 No.8586-1/9



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2SJ661
Continued from preceding page.
Parameter
Symbol
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
EAS
IAV
Note :*1 VDD=--30V, L=200μH, IAV=--38A (Fig.1)
*2 L200μH, single pulse
Conditions
Ratings
150
--55 to +150
250
--38
Unit
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--19A
ID=--19A, VGS=--10V
ID=--19A, VGS=--4V
VDS=--20V, f=1MHz
See Fig.2
VDS=--30V, VGS=--10V, ID=--38A
IS=--38A, VGS=0V
min
--60
Ratings
typ
--1.2
18
31
29.5
40
4360
470
335
33
285
295
195
80
15
12
--1.0
max
--1
±10
--2.6
39
56
--1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
0V
--10V
50Ω
RG
50Ω
L
2SJ661
VDD
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --30V
ID= --19A
RL=1.58Ω
D VOUT
2SJ661
P.G 50Ω S
Ordering Information
Device
2SJ661-1E
2SJ661-DL-1E
Package
TO-262-3L
TO-263-2L
Shipping
50pcs./magazine
800pcs./reel
memo
Pb Free
No.8586-2/9



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2SJ661
ID -- VDS
--80
Tc=25°C
--70
--60
--50 --4V
--40
--30
--20
VGS= --3V
--10
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
70 Drain-Rto-DSSou(rocenV) ol-t-ageV, GVDSS -- V IT08748
ID= --19A
60
--80
VDS= --10V
--70
ID -- VGS
--60
--50
--40
--30
--20
--10
0
0
70
25°C
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage,
RDS(on) --
VTcGS
--
V
IT08749
60
50
40
30
Tc=75°C
25°C
50
40
30
IDI=D=--1--91A9A, V, VGGS=S=--4--V10V
--25°C
20 20
10
0
--2 --3 --4 --5 --6 --7 --8
Gate-to-S|ouyrfcse V| o-lt-ageID, VGS -- V
100
7 VDS= --10V
5
--9 --10
IT08750
3 25°C
2
10
7
Tc=
--25°C
75°C
5
3
2
1.0
--0.1
2 3 5 7 --1.0
2 3 5 7 --10
2 3 5 7 --100
1000
7
5
VDD= --30V
VGS= --10V
Drain Current,
SW Time
I-D-
-- A
ID
td(off)
IT08752
3
2
tr
100
7
5 tf
td(on)
3
2
10
0
--50
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
10000
7
5
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT08751
VGS=0V
--0.3
--0.6
--0.9
--1.2
--1.5
Diode
Ciss,
FoCrwoasrsd,VoCltargses, V-S-D
-- V
VDS
IT08753
f=1MHz
Ciss
3
2
1000
7
5
3
2
Coss
Crss
10
--0.1
2 3 5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
2 3 5 7 --100
IT08754
100
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT08755
No.8586-3/9



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2SJ661
--10
VDS= --30V
--9 ID= --38A
--8
VGS -- Qg
--7
--6
--5
--4
--3
--2
--1
0
0 10 20 30 40 50 60
Total Gate Charge, Qg -- nC
2.0 PD -- Ta
70 80
IT08756
1.65
1.5
ASO
3
2 IDP= --152A(PW10μs)
--100
7
5
3
2
ID= --38A
100μ1s 0μs
--10
7
5
3 Operation in
2 this area is
--1.0 limited by RDS(on).
7
5
3
2 Tc=25°C
--0.1 Single pulse
--0.1 2 3 5 7 --1.0
2 3 5 7 --10
23
70
Drain-to-Source
PD
Voltage,
-- Tc
VDS
--
V
65
60
5 7 --100
IT16831
50
40
1.0
30
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT08735
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT08758
No.8586-4/9



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