2SJ656 Datasheet PDF - Sanyo Semicon Device

www.Datasheet-PDF.com

2SJ656
Sanyo Semicon Device

Part Number 2SJ656
Description General-Purpose Switching Device
Page 4 Pages


2SJ656 datasheet pdf
Download PDF
2SJ656 pdf
View PDF for Mobile


No Preview Available !

www.DataSheet4U.com
Ordering number : ENN7684
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
2SJ656
P-Channl Silicon MOSFET
2SJ656
General-Purpose Switching Device
Package Dimensions
unit : mm
2063A
[2SJ656] 4.5
10.0 2.8
3.2
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--100
±20
--18
--72
2.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J656
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--100V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--9A
min
--100
--1.2
14
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
20 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41504QA TS IM TA-100801 No.7684-1/4



No Preview Available !

2SJ656
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--9A, VGS=--10V
ID=--9A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--18A
VDS=--50V, VGS=--10V, ID=--18A
VDS=--50V, VGS=--10V, ID=--18A
IS=--18A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --50V
ID= --9A
RL=5.56
D VOUT
2SJ656
P.G 50S
Ratings
min typ max
Unit
58 75.5 m
74 104 m
4200
pF
280 pF
220 pF
30 ns
110 ns
340 ns
128 ns
74 nC
12.8
nC
14.7
nC
--0.93
--1.2 V
--40 Tc=25°C
--30
ID -- VDS
--6V
--4V
--20
--10 VGS= --3V
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06626
--40
VDS= --10V
ID -- VGS
--30
--20
--10
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06627
No.7684-2/4



No Preview Available !

2SJ656
RDS(on) -- VGS
140
ID= --9A
120
140
120
RDS(on) -- Tc
100
80
60
Tc=75°C
25°C
100
80
60
I DI=D-=-9-A-9,AV,GVSG=S-=-4-V-10V
--25°C
40 40
20
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT06628
yfs-- ID
100
7 VDS= --10V
5
3
2 25°C
10
7
Tc=
--25°C
75°C
5
3
2
1.0
--0.1
1000
7
5
3
2
100
7
5
3
2
23
5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
SW Time -- ID
2 3 57
IT06630
td(off)
VDD= --50V
VGS= --10V
tf
tr
td(on)
10
--0.1 2 3 5 7 --1.0 2 3 5 7 --10
--10
VDS= --50V
--9 ID= --18A
Drain Current, ID -- A
VGS -- Qg
--8
23
5 7 --100
IT06632
--7
--6
--5
--4
--3
--2
--1
0
0 10 20 30 40 50 60 70 80
Total Gate Charge, Qg -- nC
IT06634
20
0
--50 --25
0
25 50 75 100 125 150
--100
7
5
VGS=0
3
2
Case Temperature, Tc -- °C
IF -- VSD
IT06629
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
0
--0.3
--0.6
--0.9
--1.2
--1.5
10000
7
Diode Forward Voltage, VSD -- V IT06631
Ciss, Coss, Crss -- VDS
f=1MHz
5 Ciss
3
2
1000
7
5
3 Coss
2
Crss
100
0
2
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT06633
ASO
--100 IDP= --72A
<10µs
7
5
3
2
ID= --18A
100µ1s0µs
--10
7
5
3
2
--1.0
7
Operation in this area
is limited by RDS(on).
DC
1001m0sm1sms
operation
5
3
2 Tc=25°C
--0.1 Single pulse
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2
Drain-to-Source Voltage, VDS -- V IT06635
No.7684-3/4



No Preview Available !

PD -- Ta
2.5
2SJ656
40
PD -- Tc
35
2.0
30
1.5 25
20
1.0 15
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06636
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT06637
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject
to change without notice.
PS No.7684-4/4



2SJ656 datasheet pdf
Download PDF
2SJ656 pdf
View PDF for Mobile


Related : Start with 2SJ65 Part Numbers by
2SJ650 DC / DC Converter Applications 2SJ650
Sanyo Semicon Device
2SJ650 pdf
2SJ650 P-Channl Silicon MOSFET 2SJ650
ON Semiconductor
2SJ650 pdf
2SJ651 P CHANNEL SILICON TRASISTOR 2SJ651
Sanyo Semicon Device
2SJ651 pdf
2SJ652 General-Purpose Switching Device Applications 2SJ652
Sanyo Semicon Device
2SJ652 pdf
2SJ653 General-Purpose Switching Device Applications 2SJ653
Sanyo Semicon Device
2SJ653 pdf
2SJ654 P-Channl Silicon MOSFET 2SJ654
Sanyo
2SJ654 pdf
2SJ655 P-Channel Silicon MOSFET 2SJ655
Sanyo Semicon Device
2SJ655 pdf
2SJ656 General-Purpose Switching Device 2SJ656
Sanyo Semicon Device
2SJ656 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact