2SJ652 Datasheet PDF - Sanyo Semicon Device

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2SJ652
Sanyo Semicon Device

Part Number 2SJ652
Description General-Purpose Switching Device Applications
Page 4 Pages


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Ordering number : ENN7625
2SJ652
P-Channl Silicon MOSFET
2SJ652
General-Purpose Switching Device Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ652]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--28
--112
2.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J652
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--14A
min
--60
--1.2
18
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
26 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72503 TS IM TA-4245 No.7625-1/4



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2SJ652
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--14A, VGS=--10V
ID=--14A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--28A
VDS=--30V, VGS=--10V, ID=--28A
VDS=--30V, VGS=--10V, ID=--28A
IS=--28A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --14A
RL=2.1
D VOUT
2SJ652
P.G 50S
Ratings
min typ max
Unit
28.5
38 m
39 55.5 m
4360
pF
470 pF
335 pF
33 ns
210 ns
310 ns
180 ns
80 nC
15 nC
12 nC
--0.96
--1.2 V
--50
Tc=25°C
--40
ID -- VDS
--4V
--30
--20
VGS= --3V
--10
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06535
--50
VDS= --10V
--40
ID -- VGS
--30
--20
--10 25°C
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06536
No.7625-2/4



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2SJ652
RDS(on) -- VGS
100
ID= --14A
80
60
40 Tc=75°C
25°C
--25°C
20
RDS(on) -- Tc
70
60
50
40
30
I DI=D-=-1-4-A14,AV,GVSG= S--=4V--10V
20
10
0
--2 --3 --4 --5 --6 --7 --8
Gate-to-Source Voltage, VGS -- V
yfs-- ID
100
VDS= --10V
7
--9 --10
IT06537
5
3
Tc= --25°C
2 75°C
25°C
10
7
5
3
2
1.0
--0.1
7
5
3
2
100
7
5
3
2
10
--0.1
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
2 3 5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
SW Time -- ID
2 3 57
IT06539
td(off)
tf
tr
td(on)
23
VDD= --30V
VGS= --10V
5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
VGS -- Qg
23 5
IT06541
10 20 30 40 50 60 70 80
Total Gate Charge, Qg -- nC
IT06559
0
--50
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
0
7
5
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IT06538
IF -- VSD
VGS=0
--0.3
--0.6
--0.9
--1.2
--1.5
Diode Forward Voltage, VSD -- V IT06540
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
1000
7
5
3
2
Coss
Crss
100
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT06542
ASO
3
2
IDP= --112A
<10µs
--100
7
5
3
ID= --28A
2
--10
7
5
3
2
100µ1s0µs
DC op1e0r0amtio1sn0m1sms
Operation in this area
--1.0
7
is limited by RDS(on).
5
3
2 Tc=25°C
--0.1 Single pulse
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT06543
No.7625-3/4



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PD -- Ta
2.5
2SJ652
40
PD -- Tc
35
2.0
30
1.5 25
20
1.0
15
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06545
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT06544
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2003. Specifications and information herein are subject
to change without notice.
PS No.7625-4/4



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