2SJ651 Datasheet PDF - Sanyo Semicon Device

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2SJ651
Sanyo Semicon Device

Part Number 2SJ651
Description P CHANNEL SILICON TRASISTOR
Page 4 Pages


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Ordering number : ENN7501
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
2SJ651
P-Channl Silicon MOSFET
2SJ651
DC / DC Converter Applications
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ651]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--20
--80
2.0
25
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J651
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--10A
min
--60
--1.2
11
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
17 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM TA-100559 No.7501-1/4



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2SJ651
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--10A, VGS=--10V
ID=--10A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--20A
VDS=--30V, VGS=--10V, ID=--20A
VDS=--30V, VGS=--10V, ID=--20A
IS=--20A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --10A
RL=3
D VOUT
2SJ651
P.G 50S
Ratings
min typ max
Unit
45 60 m
65 92 m
2200
pF
220 pF
165 pF
18 ns
115 ns
190 ns
120 ns
45 nC
7.4 nC
9 nC
--0.95
--1.2 V
ID -- VDS
--50
Tc=25°C
--45
--40 --6V
--35 --4V
--30
--25
--20
--15
--10
--5
0
0
VGS= --3V
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06170
--45
VDS= --10V
--40
ID -- VGS
--35
--30
--25
--20
--15
--10
--5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06171
No.7501-2/4



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2SJ651
RDS(on) -- VGS
160
ID= --10A
140
120
100
80
Tc= 75°C
60
25°C
40 --25°C
20
0
0
--2.5
--2.0
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V
VGS(off) -- Tc
IT06172
VDS= --10V
ID= --1mA
--1.5
--1.0
--0.5
0
--50
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
5
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IF -- VSD
IT06174
VGS=0
--0.3
--0.6
--0.9
--1.2
--1.5
Diode Forward Voltage, VSD -- V IT06176
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
1000
7
5
3
2
Coss
Crss
100
7
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT06178
RDS(on) -- Tc
140
120
100
80
60
I
D= --10A, V
ID= --10A,
GS= --4V
VGS= --10V
40
20
0
--50 --25
100
7
5
3
2
10
7
5
3
2
0 25 50 75 100
Case Temperature, Tc -- °C
yfs-- ID
125 150
IT06173
VDS= --10V
25°C
Tc= --25°C
75°C
1.0
7
5
--0.1
5
3
2
23
5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
SW Time -- ID
td(off)
2 3 5 7 --100
IT06175
VDD= --30V
VGS= --10V
100 tf
7
5
tr
3
2 td(on)
10
7
--0.1
23
--10
VDS= --30V
--9 ID= --20A
5 7 --1.0 2 3 5
Drain Current, ID -- A
VGS -- Qg
7 --10
--8
23
IT06177
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25 30 35 40 45
Total Gate Charge, Qg -- nC
IT06179
No.7501-3/4



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2SJ651
ASO
2
--100 IDP= --80A
7
5
3 ID= --20A
2
--10
7
5
3
DC
<10µs
op1e0ra01tmi0omsns1ms 100µs
10µs
2 Operation in this area
--1.0 is limited by RDS(on).
7
5
3
2 Tc=25°C
--0.1 Single pulse
--0.1 2 3 5 7 --1.0
23
5 7 --10
23
Drain-to-Source Voltage, VDS -- V
PD -- Tc
30
5 7 --100
IT06180
2.5
2.0
1.5
1.0
0.5
0
0
PD -- Ta
20 40 60 80 100 120 140 160
Ambient Tamperature, Ta -- °C
IT06181
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT06182
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2003. Specifications and information herein are subject
to change without notice.
PS No.7501-4/4



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