2SJ650 Datasheet PDF - Sanyo Semicon Device

www.Datasheet-PDF.com

2SJ650
Sanyo Semicon Device

Part Number 2SJ650
Description DC / DC Converter Applications
Page 4 Pages


2SJ650 datasheet pdf
Download PDF
2SJ650 pdf
View PDF for Mobile


No Preview Available !

www.DataSheet4U.com
Ordering number : ENN7500
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
2SJ650
P-Channl Silicon MOSFET
2SJ650
DC / DC Converter Applications
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ650]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--12
--48
2.0
20
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J650
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--6A
min
--60
--1.2
7
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
10 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51903 TS IM TA-100560 No.7500-1/4



No Preview Available !

2SJ650
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--6A, VGS=--10V
ID=--6A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
IS=--12A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --6A
RL=5
D VOUT
2SJ650
P.G 50S
Ratings
min typ max
Unit
100 135 m
145 205 m
1020
pF
110 pF
76 pF
10 ns
145 ns
85 ns
96 ns
21 nC
3.8 nC
4.5 nC
--0.9 --1.2 V
ID -- VDS
--25
Tc=25°C
--20 --8V
--6V
--15
--4V
--10
--5
VGS= --3V
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06157
--25
VDS= --10V
--20
ID -- VGS
--15
--10
--5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06158
No.7500-2/4



No Preview Available !

2SJ650
RDS(on) -- VGS
300
ID= --6A
300
250 250
200 200
150
75°C
150
25°C
100 100
Tc= --25°C
50 50
RDS(on) -- Tc
I DI=D-=-6-A-6,AV,GVSG= S--=4V--10V
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT06159
VGS(off) -- Tc
--2.5
VDS= --10V
ID= --1mA
--2.0
--1.5
--1.0
--0.5
0
--50
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IF -- VSD
IT06169
VGS=0
--0.3 --0.6 --0.9 --1.2 --1.5
Diode Forward Voltage, VSD -- V IT06162
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT06164
0
--50 --25
100
7
5
3
2
10
7
5
3
2
0 25 50 75 100 125 150
Case Temperature, Tc -- °C
yfs-- ID
IT06160
VDS= --10V
25°C
Tc=
--25°C
75°C
1.0
7
5
3
--0.1
1000
7
5
23
5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
SW Time -- ID
23
IT06161
VDD= --30V
VGS= --10V
3
2
100
7
5
3
2
10
7
5
--0.1
23
--10
VDS= --30V
--9 ID= --12A
--8
td(off)
tf
tr
td(on)
5 7 --1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 --10
IT06163
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25
Total Gate Charge, Qg -- nC
IT06165
No.7500-3/4



No Preview Available !

2SJ650
ASO
--100
7
5
IDP= --48A
3
<10µs
10µs
2
--10
7
5
3
2
--1.0
ID=
--12A
Operation
in
this
DC
area
100m10sm1sm10s0µs
operation
7
5
is limited by RDS(on).
3
2 Tc=25°C
--0.1 Single pulse
--0.1 2 3 5 7 --1.0
23
5 7 --10
23
Drain-to-Source Voltage, VDS -- V
PD -- Tc
25
5 7 --100
IT06166
2.5
2.0
1.5
1.0
0.5
0
0
PD -- Ta
20 40 60 80 100 120 140 160
Ambient Tamperature, Ta -- °C
IT06167
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT06168
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2003. Specifications and information herein are subject
to change without notice.
PS No.7500-4/4



2SJ650 datasheet pdf
Download PDF
2SJ650 pdf
View PDF for Mobile


Related : Start with 2SJ65 Part Numbers by
2SJ650 DC / DC Converter Applications 2SJ650
Sanyo Semicon Device
2SJ650 pdf
2SJ650 P-Channl Silicon MOSFET 2SJ650
ON Semiconductor
2SJ650 pdf
2SJ651 P CHANNEL SILICON TRASISTOR 2SJ651
Sanyo Semicon Device
2SJ651 pdf
2SJ652 General-Purpose Switching Device Applications 2SJ652
Sanyo Semicon Device
2SJ652 pdf
2SJ653 General-Purpose Switching Device Applications 2SJ653
Sanyo Semicon Device
2SJ653 pdf
2SJ654 P-Channl Silicon MOSFET 2SJ654
Sanyo
2SJ654 pdf
2SJ655 P-Channel Silicon MOSFET 2SJ655
Sanyo Semicon Device
2SJ655 pdf
2SJ656 General-Purpose Switching Device 2SJ656
Sanyo Semicon Device
2SJ656 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact