2SJ650 Datasheet PDF - ON Semiconductor

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2SJ650
ON Semiconductor

Part Number 2SJ650
Description P-Channl Silicon MOSFET
Page 4 Pages


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2SJ650
Ordering number : ENN7500
2SJ650
P-Channl Silicon MOSFET
DC / DC Converter Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ650]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--12
--48
2.0
20
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J650
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--6A
min
--60
--1.2
7
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
10 S
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SJ650/D



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2SJ650
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--6A, VGS=--10V
ID=--6A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
IS=--12A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --6A
RL=5
D VOUT
2SJ650
P.G 50S
Ratings
min typ max
Unit
100 135 m
145 205 m
1020
pF
110 pF
76 pF
10 ns
145 ns
85 ns
96 ns
21 nC
3.8 nC
4.5 nC
--0.9 --1.2 V
ID -- VDS
ID -- VGS
--25 --25
Tc=25°C
VDS= --10V
--20 --8V
--6V
--15
--20
--15
--4V
--10 --10
--5 --5
VGS= --3V
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06157
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06158
Rev.0 I Page 2 of 4 I www.onsemi.com



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2SJ650
RDS(on) -- VGS
300
ID= --6A
300
250 250
200 200
150
75°C
150
25°C
100 100
Tc= --25°C
50 50
RDS(on) -- Tc
I DI=D-=-6-A-6,AV,GVSG= S--=4V--10V
0
0
--2.5
--2.0
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V
VGS(off) -- Tc
IT06159
VDS= --10V
ID= --1mA
--1.5
--1.0
0
--50 --25
100
7
5
3
2
10
7
5
3
2
0 25 50 75 100 125 150
Case Temperature, Tc -- °C
yfs-- ID
IT06160
VDS= --10V
25°C
Tc=
--25°C
75°C
--0.5
0
--50
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IF -- VSD
IT06169
VGS=0
--0.3
--0.6
--0.9
--1.2
--1.5
Diode Forward Voltage, VSD -- V IT06162
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
1.0
7
5
3
--0.1
1000
7
5
23
5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
SW Time -- ID
23
IT06161
VDD= --30V
VGS= --10V
3
2
100
7
5
3
2
10
7
5
--0.1
23
--10
VDS= --30V
--9 ID= --12A
--8
td(off)
tf
tr
td(on)
5 7 --1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 --10
IT06163
--7
--6
Coss
Crss
--5
--4
--3
--2
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT06164
--1
0
0 5 10 15 20 25
Total Gate Charge, Qg -- nC
IT06165
Rev.0 I Page 3 of 4 I www.onsemi.com



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2SJ650
ASO
--100
7
5
IDP= --48A
3
<10µs
10µs
2
--10
7
5
3
2
--1.0
ID=
--12A
Operation
in
this
DC
area
100m10sm1sm10s0µs
operation
7
5
is limited by RDS(on).
3
2 Tc=25°C
--0.1 Single pulse
--0.1 2 3 5 7 --1.0
23
5 7 --10
23
Drain-to-Source Voltage, VDS -- V
PD -- Tc
25
5 7 --100
IT06166
2.5
2.0
1.5
1.0
0.5
0
0
PD -- Ta
20 40 60 80 100 120 140 160
Ambient Tamperature, Ta -- °C
IT06167
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT06168
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any
products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply
high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications
can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s
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products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components
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2SJ650/D



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