2SD476 Datasheet PDF - Renesas

www.Datasheet-PDF.com

2SD476
Renesas

Part Number 2SD476
Description Silicon NPN Triple Diffused
Page 6 Pages


2SD476 datasheet pdf
Download PDF
2SD476 pdf
View PDF for Mobile

No Preview Available !

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
www.DataSheet.co.kr
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesaswww.DataSheet.co.kr Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

2SD476(K), 2SD476A(K)
Silicon NPN Triple Diffused
Application
Power switching complementary pair with 2SB566(K) and 2SB566A(K)
Outline
TO-220AB
ADE-208-898 (Z)
1st. Edition
September 2000
www.DataSheet.co.kr
1
23
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Ratings
2SD476(K)
70
50
5
4
8
40
150
–55 to +150
2SD476A(K)
70
60
5
4
8
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

2SD476(K), 2SD476A(K)
Electrical Characteristics (Ta = 25°C)
2SD476(K)
2SD476A(K)
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
70
70 —
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
50
60 —
V
IC = 50 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
—— V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
DC current transfer ratio hFE1
——1
——1
µA VCB = 50 V, IE = 0
60 — 200 60 — 200
VCE = 4 V, IC = 1 A
(Pulse test)
Collector to emitter
saturation voltage
hFE2
VCE(sat)
35 —
——
— 35 —
1.0 — —
1.0 V
VCE = 4 V, IC = 0.1 A
IC = 2 A, IB = 0.2 A
Base to emitter
saturation voltage
VBE(sat) — — 1.2 — — 1.2 V
Gain bandwidth product fT
—7 — —7 —
Turn on time
ton — 0.3 — — 0.3 —
Turn off time
toff — 3.0 — — 3.0 —
Storage time
tstg — 2.5 — — 2.5 —
Note:
1.
The
2SD476(K)
and
2SD476A(K)
are
grouped by
www.DataSheet.co.kr
hFE1
as
follows.
MHz
µs
µs
µs
VCE = 4 V, IC = 0.5 A
VCC = 10.5 V
IC = 10 IB1 = –10 IB2 =
0.5 A
B
60 to 120
C
100 to 200
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
10
5 IC max
2
(10 V, 4 A)
PC = 40 W
1.0 (20 V, 2 A)
0.5
TC = 25°C
0.2
0.1
1
(50 V, 0.22 A)
2SD476A K 2SD476 K
(60 V, 0.15 A)
2 5 10 20 50
100
Collector to emitter voltage VCE (V)
Datasheet pdf - http://www.DataSheet4U.net/



2SD476 datasheet pdf
Download PDF
2SD476 pdf
View PDF for Mobile


Related : Start with 2SD47 Part Numbers by
2SD471 SILICON TRANSISTOR 2SD471
Micro Electronics
2SD471 pdf
2SD471 NPN Silicon Epitaxial Planar Transistor 2SD471
SEMTECH
2SD471 pdf
2SD471A AUDIO FREQUENCY POWER AMPLIFIER 2SD471A
USHA
2SD471A pdf
2SD476 Silicon NPN Triple Diffused 2SD476
Hitachi Semiconductor
2SD476 pdf
2SD476 SILICON POWER TRANSISTOR 2SD476
SavantIC
2SD476 pdf
2SD476 Silicon NPN Triple Diffused 2SD476
Renesas
2SD476 pdf
2SD476A Silicon NPN Triple Diffused 2SD476A
Hitachi Semiconductor
2SD476A pdf
2SD476A SILICON POWER TRANSISTOR 2SD476A
SavantIC
2SD476A pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact