2SD467 Datasheet PDF - Renesas

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2SD467
Renesas

Part Number 2SD467
Description Silicon NPN Epitaxial
Page 6 Pages


2SD467 datasheet pdf
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2SD467
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SB561
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
REJ03G0765-0200
(Previous ADE-208-1134)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
3
2
1
www.DataSheet.co.kr
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
Ratings
25
20
5
0.7
1.0
0.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
W
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 5
Datasheet pdf - http://www.DataSheet4U.net/



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2SD467
Electrical Characteristics
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE*1
Min
25
20
5
85
Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage
VBE
Gain bandwidth product
fT
Collector output capacitance
Cob
Note: 1. The 2SD467 is grouped by hFE as follows.
BC
85 to170
120 to 240
Typ
0.19
0.76
280
12
Max
1.0
240
0.5
1.0
Unit
V
V
V
µA
V
V
MHz
pF
(Ta = 25°C)
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE =
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 1 V, IC = 0.15 A
(Pulse test)
IC = 0.5 A, IB = 0.05 A
(Pulse test)
VCE = 1 V, IC = 0.15 A
(Pulse test)
VCE = 1 V, IC = 0.15 A
(Pulse test)
VCB = 10 V, IE = 0, f = 1 MHz
www.DataSheet.co.kr
Rev.2.00 Aug 10, 2005 page 2 of 5
Datasheet pdf - http://www.DataSheet4U.net/



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2SD467
Main Characteristics
Maximum Collector Dissipation Curve
0.6
0.4
0.2
0 50 100 150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
1,000
300
VCE = 1 V
100
30
Ta = 75°C 25°C
10
3
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Collector to Emitter Saturation
Voltage vs. Collector Current
0.5
IC = 10 IB
0.4
0.3
0.2
Ta = 75°C 25°C
0.1
0
1 3 10 30 100 300 1,000
Collector Current IC (mA)
Typical Output Characteristics
500
2.5
400 2.0
300 1.5
1.0
200
0.5 mA
100
IB = 0
0 0.4 0.8 1.2 1.6 2.0
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
5,000
2,000
1,000
VCE = 1 V
Pulse
500
Ta = 75°C
200
25°C
100
www.DataSheet.co.kr
50
20
10
5
1 3 10 30 100 300 1,000
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
400
VCE = 1 V
300
200
100
0
10 20
50 100 200 500 1,000
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
Datasheet pdf - http://www.DataSheet4U.net/



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2SD467
Collector Output Capacitance vs.
Collector to Base Voltage
500
f = 1 MHz
200 IE = 0
100
50
20
10
5
0.5 1.0 2
5 10 20 50
Collector to Base Voltage VCB (V)
www.DataSheet.co.kr
Rev.2.00 Aug 10, 2005 page 4 of 5
Datasheet pdf - http://www.DataSheet4U.net/



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