2SD2057 Datasheet PDF - Panasonic Semiconductor

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2SD2057
Panasonic Semiconductor

Part Number 2SD2057
Description Silicon NPN triple diffusion planar type For horizontal deflection output
Page 2 Pages

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Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
s Features
q Incorporating a built-in damper diode
q Reduction of a parts count and simplification of a circuit are al-
lowed
q High breakdown voltage with high reliability
q High-speed switching
q Wide area of safe operation (ASO)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VEBO
ICP
IC
IB
PC
1500
1500
7
20
5
4
100
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
15.0±0.3
11.0±0.2
5.0±0.2
3.2
φ3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(b)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time (L-load)
Fall time (L-load)
Diode forward voltage
VEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VF
Conditions
min typ max Unit
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
30 µA
300 µA
IE = 500mA, IC = 0
7
V
VCE = 10V, IC = 5A
4.5 15
IC = 5A, IBw= 1.2wA w.DataShee8t4UV .com
IC = 5A, IB = 1.2A
1.5 V
VCE = 10V, IC = 1A, f = 0.5MHz
IC = 5A, IB1 = 1.2A, IB2 = –1.2A,
Lleak = 5µH
2 MHz
12 µs
0.8 µs
IC = –6A, IB = 0
–2.3 V
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