2SD2057 Datasheet PDF - Panasonic Semiconductor

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2SD2057
Panasonic Semiconductor

Part Number 2SD2057
Description Silicon NPN triple diffusion planar type For horizontal deflection output
Page 2 Pages


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Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
s Features
q Incorporating a built-in damper diode
q Reduction of a parts count and simplification of a circuit are al-
lowed
q High breakdown voltage with high reliability
q High-speed switching
q Wide area of safe operation (ASO)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VEBO
ICP
IC
IB
PC
1500
1500
7
20
5
4
100
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
15.0±0.3
11.0±0.2
5.0±0.2
3.2
φ3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(b)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time (L-load)
Fall time (L-load)
Diode forward voltage
VEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VF
Conditions
min typ max Unit
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
30 µA
300 µA
IE = 500mA, IC = 0
7
V
VCE = 10V, IC = 5A
4.5 15
IC = 5A, IBw= 1.2wA w.DataShee8t4UV .com
IC = 5A, IB = 1.2A
1.5 V
VCE = 10V, IC = 1A, f = 0.5MHz
IC = 5A, IB1 = 1.2A, IB2 = –1.2A,
Lleak = 5µH
2 MHz
12 µs
0.8 µs
IC = –6A, IB = 0
–2.3 V
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Power Transistors
PC — Ta
120
(1) TC=Ta
(2) With a 100 × 100 × 2mm
100 Al heat sink
(3) Without heat sink
(1) (PC=3W)
80
60
40
20
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
10
TC=25˚C
8 IB=1.6A
1.4A
1.2A
1A
6 0.8A
0.6A
0.4A
4
0.2A
2
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2057
VCE(sat) — IC
3 IC/IB=2
1
0.3
0.1
0.03
25˚C TC=–25˚C
100˚C
0.01
0.1
0.3 1 3
Collector current IC (A)
10
VBE(sat) — IC
3
25˚C
1 TC=100˚C
–25˚C
0.3
IC/IB=2
0.1
0.03
0.01
0.1
0.3 1 3
Collector current IC (A)
10
1000
300
100
hFE — IC
VCE=10V
30
10
TC=100˚C
3 25˚C
–25˚C
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
30 ICP
10 IC
3
1
50ms
DC
t=1ms
10ms
0.3
0.1
0.03
0.01 Non repetitive pulse
TC=25˚C
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Area of safe operation, horizontal operation ASO
24
20 ICP
16
f=15.75kHz, TC=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
12
8
4
<1mA
0
0 400 800 1200 1600 2000
Collector to emitter voltage VCE (V)
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)
10
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2



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